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Material for zinc oxide pressure-sensitive resistor and preparation method of material

A piezoresistor and zinc oxide technology, applied in the field of electronic devices, can solve the problems of small leakage current, high sintering temperature, and low varistor voltage value, and achieve the effects of reduced production cost, simple preparation process, and excellent comprehensive performance

Inactive Publication Date: 2018-10-19
JIANGSU SHIRUI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But now because the automobile industry, communication equipment, railway signals, micro motors and various electronic components require thin and light resistors, after the thickness of the resistor components is reduced, not only the mechanical strength of the components is reduced, but also the flow capacity is reduced, so How to find a varistor functional material with low varistor voltage value per unit thickness and small leakage current has become an urgent problem to be solved in the zinc oxide preparation industry.
[0004] The invention patent with the application number of 201510758001.7 discloses a zinc oxide varistor dielectric material and its preparation method. The zinc oxide varistor dielectric material of the invention has a strong pulse impact resistance and is expected to be applied to power arresters or other Lightning protection and overvoltage protection for power electronic circuits; however, the zinc oxide varistor dielectric material of the present invention is sintered at 1000-1100 ° C, and the sintering temperature is relatively high, which does not meet the requirements of energy saving and environmental protection

Method used

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  • Material for zinc oxide pressure-sensitive resistor and preparation method of material

Examples

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Embodiment 1

[0016] A material for a zinc oxide varistor, comprising the following components in parts by mass: 100 parts of zinc oxide, V 2 o 5 1.3 parts, TiO 2 1.3 parts, Bi 2 o 3 1.3 parts, MnO 2 1.3 parts, MgO0.6 parts, Nb 2 o 5 0.6 parts, BaO1.3 parts, Cr 2 o 3 1.3 parts, SnO 2 1.3 parts, SiO 2 1.3 parts, Ni 2 o 3 1.3 parts, 0.6 parts of boric acid, Sm 2 o 3 0.6 parts, Co 3 o 4 0.6 parts, 1.3 parts of tin oxide, 20 parts of ytterbium oxide, 15 parts of dispersant, 15 parts of binder and 60 parts of deionized water.

[0017] The zinc oxide is nano zinc oxide powder, and the particle size of the nano zinc oxide powder is 40nm.

[0018] A preparation method for a material of a zinc oxide piezoresistor, comprising the following steps: step 1, weighing raw materials; step 2, taking V 2 o 5 、TiO 2 、 Bi 2 o 3 , MnO 2 , MgO, Nb 2 o 5 , BaO, Cr 2 o 3 , SnO 2 , SiO 2 、Ni 2 o 3 , boric acid, Sm 2 o 3 and Co 3 o 4 Mix and dissolve in deionized water to obtain a m...

Embodiment 2

[0021] A material for zinc oxide varistors, comprising the following components in parts by mass: 80 parts of zinc oxide, V 2 o 5 0.05 parts, TiO 2 0.05 part, Bi 2 o 3 0.05 parts, MnO 2 0.05 parts, MgO0.05 parts, Nb 2 o 5 0.05 parts, BaO0.05 parts, Cr 2 o 3 0.05 parts, SnO 2 0.05 parts, SiO 2 0.05 parts, Ni 2 o 3 0.05 parts, 0.05 parts of boric acid, Sm 2 o 3 0.05 copies, Co 3 o 40.05 parts, 0.05 parts of tin oxide, 10 parts of ytterbium oxide, 10 parts of dispersant, 5 parts of binder and 30 parts of deionized water.

[0022] The zinc oxide is nano zinc oxide powder, and the particle size of the nano zinc oxide powder is 30nm.

[0023] A preparation method for a material of a zinc oxide piezoresistor, comprising the following steps: step 1, weighing raw materials; step 2, taking V 2 o 5 、TiO 2 、 Bi 2 o 3 , MnO 2 , MgO, Nb 2 o 5 , BaO, Cr 2 o 3 , SnO 2 , SiO 2 、Ni 2 o 3 , boric acid, Sm 2 o 3 and Co 3 o 4 Mix and dissolve in deionized water to...

Embodiment 3

[0026] A material for a zinc oxide varistor, comprising the following components in parts by mass: 98 parts of zinc oxide, V 2 o 5 0.07 parts, TiO 2 0.09 parts, Bi 2 o 3 0.07 parts, MnO 2 1.1 parts, MgO0.3 parts, Nb 2 o 5 0.5 part, BaO1.1 part, Cr 2 o 3 1.2 parts, SnO 2 0.07 parts, SiO 2 0.08 parts, Ni 2 o 3 0.09 parts, 0.4 parts of boric acid, Sm 2 o 3 0.35 parts, Co 3 o 4 0.27 parts, 0.08 parts of tin oxide, 15 parts of ytterbium oxide, 12 parts of dispersant, 12 parts of binder and 45 parts of deionized water.

[0027] The zinc oxide is nano zinc oxide powder, and the particle size of the nano zinc oxide powder is 10nm.

[0028] A preparation method for a material of a zinc oxide piezoresistor, comprising the following steps: step 1, weighing raw materials; step 2, taking V 2 o 5 、TiO 2 、 Bi 2 o 3 , MnO 2 , MgO, Nb 2 o 5 , BaO, Cr 2 o 3 , SnO 2 , SiO 2 、Ni 2 o 3 , boric acid, Sm 2 o 3 and Co 3 o 4 Mix and dissolve in deionized water to obta...

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Abstract

The invention belongs to the field of electronic devices and in particular relates to a material for a zinc oxide pressure-sensitive resistor and a preparation method of the material. The material comprises zinc oxide, V2O5, TiO2, Bi2O3, MnO2, MgO, Nb2O5, BaO, Cr2O3, SnO2, SiO2, Ni2O3, boric acid, Sm2O3, Co3O4, tin oxide, ytterbium oxide, a dispersant, an adhesive and deionized water. The zinc oxide pressure-sensitive resistor prepared by using the method is excellent in material property, free of toxic element, namely lead, green and environmentally friendly and low in energy consumption in apreparation process, and requirements of energy conservation and environment protection can be met.

Description

technical field [0001] The invention belongs to the field of electronic devices, and in particular relates to a material for a zinc oxide piezoresistor and a preparation method thereof. Background technique [0002] The varistor is a voltage limiting type of protection period. Utilizing the nonlinear characteristics of the varistor, when an overvoltage occurs between the two poles of the varistor, the varistor can clamp the voltage to a relatively fixed voltage value, never realizing the protection of the subsequent circuit. In recent years, with the rapid development of information technology, the miniaturization, multi-function, and high stability of electronic equipment are called the inevitable trend of development, and the varistor as a protective semiconductor element is also correspondingly moving toward thinner, lower voltage, and higher development in the direction of reliability. [0003] Zinc oxide varistors have been widely used because of their simple process,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/626
CPCC04B35/453C04B35/62615C04B2235/3206C04B2235/3215C04B2235/3224C04B2235/3232C04B2235/3239C04B2235/3241C04B2235/3251C04B2235/3267C04B2235/3277C04B2235/3279C04B2235/3293C04B2235/3298C04B2235/3409C04B2235/3418C04B2235/96
Inventor 汪洋
Owner JIANGSU SHIRUI ELECTRONICS CO LTD