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Method for preparing organic photovoltaic device with high-conductivity interface functional layer

A technology of organic photovoltaic devices and functional layers, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as difficulty in improving device efficiency, short circuit, and film microcracks, and achieve improved transfer, high purity, and The effect of less microcracks on the surface

Inactive Publication Date: 2018-10-19
CHONGQING UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If these existing nickel oxide thin films are applied to the preparation of photovoltaic devices, since the thin films are prone to a large number of microcracks, it is easy to make it difficult to improve the efficiency of the obtained devices, and even serious short circuits occur.

Method used

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  • Method for preparing organic photovoltaic device with high-conductivity interface functional layer
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  • Method for preparing organic photovoltaic device with high-conductivity interface functional layer

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Embodiment 1

[0044] A method for preparing an organic photovoltaic device with a highly conductive interface functional layer, comprising the following steps in sequence:

[0045] (1) Cleaning and drying the base ITO conductive glass

[0046]Place the base ITO conductive glass in deionized water for 10 minutes, rub it gently with a dust-free cloth to remove dirt, then place it in deionized water for 10 minutes, and then place it in acetone, chloroform, and isopropanol for 10 minutes. , and finally placed in an oven to dry for later use;

[0047] (2) Configure the precursor solution

[0048] Get nickel hydroxide, ethanolamine and ethylene glycol methyl ether, ammoniacal liquor (containing ammonia 25%) respectively, and the four carry out batching according to the ratio of 0.1g:2ml:2ml:2ml; Fully mix and dissolve methyl ether, then add part of ammonia water and stir thoroughly, let it stand for more than 12 hours, and take the supernatant; continue to add part of ethanolamine and ethylene ...

Embodiment 2

[0066] A method for preparing an organic photovoltaic device with a highly conductive interface functional layer, comprising the following steps in sequence:

[0067] (1) Cleaning and drying the base ITO conductive glass

[0068] The base ITO conductive glass was cleaned with deionized water, acetone, chloroform, and isopropanol respectively twice, and then dried in an oven for later use;

[0069] (2) Configure the precursor solution

[0070] Take nickel hydroxide, ethanolamine and ethanol, and ammonia water (containing 26% ammonia), and the four are mixed according to the ratio of 0.02g:2ml:4ml:4ml; first, fully mix and dissolve nickel hydroxide, part of ethanolamine and ethanol, and then add Stir part of the ammonia water fully, let it stand still for more than 12 hours, and take the supernatant; continue to add part of ethanolamine and ethanol to fully mix and dissolve the remaining undissolved nickel hydroxide, then add part of the ammonia water and stir well, let it stan...

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Abstract

The invention relates to a method for preparing an organic photovoltaic device with a high-conductivity interface functional layer. The method comprises the following steps in sequence: (1) cleaning substrate ITO conductive glass; (2) arranging a precursor solution; (3) preparing a nickel oxide film; (4) preparing a photosensitive layer; (5) preparing an electron transport layer; (6) preparing anelectrode. The preparation method is low in cost and simple in operation, and can produce an organic photovoltaic device having beneficial characteristics such as higher charge transport performance.

Description

technical field [0001] The invention relates to an organic photovoltaic device, in particular to a method for preparing an organic photovoltaic device with an interface functional layer with high conductivity. Background technique [0002] At present, in the field of organic photovoltaic devices, nickel oxide (NiOx) thin films have important applications as an excellent hole transport material. Its construction can improve the energy level structure and charge transport performance inside the device, thereby enhancing the photoelectric conversion capability of the device. [0003] At present, the preparation methods of nickel oxide thin films for photovoltaic devices mainly include physical and chemical methods, such as vacuum evaporation, magnetron sputtering, ion beam deposition, epitaxial film deposition, chemical / electrochemical deposition, etc. method and sol-gel method. Among them, the sol-gel method is a common method for preparing nickel oxide films. It uses solubl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/80H10K30/00Y02E10/549
Inventor 胡荣
Owner CHONGQING UNIV OF ARTS & SCI
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