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Method for forming dielectric layer and method for manufacturing semiconductor device

A technology of a dielectric layer and an insulating layer, applied in the field of semiconductor devices, can solve the problems of difficulty in manufacturing semiconductor devices, reducing process margins, etc.

Pending Publication Date: 2018-11-02
SAMSUNG ELECTRONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although much research has been done to overcome this difficulty, reducing the process margin has resulted in several difficulties in the manufacture of semiconductor devices

Method used

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  • Method for forming dielectric layer and method for manufacturing semiconductor device
  • Method for forming dielectric layer and method for manufacturing semiconductor device
  • Method for forming dielectric layer and method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0077] Example 1: Preparation of 1-((bicycloheptenyl)diethoxysilyl)-2-(methyldiethoxysilyl)methane

[0078] Step 1. Preparation of 1-(trichlorosilyl)-2-(methyldichlorosilyl)methane

[0079] Acetonitrile (1500 mL) and (chloromethyl)dichloromethylsilane (500 g, 3.06 mol, 1.0 equiv) were added to a flame-dried 5000 mL Schlenk flask and heated to 70°C. Triethylamine (340.37 g, 3.36 mol, 1.1 eq) was added to the reaction solution, and then trichlorosilane (455.61 g, 3.36 mol, 1.1 eq) was slowly added to the flask while maintaining the temperature at 70°C. The reaction solution was stirred at 70°C for 5 hours, filtered, and then treated four times with n-pentane (1500 mL). The resulting solution was depressurized to remove solvent and purified (at 28 °C and 1.01 Torr) to obtain colorless MeCl 2 Si-CH 2 -SiCl 3 Liquid (160.54 g, yield: 20%).

[0080] 1 H-NMR (C 6 D. 6 )δ0.38(3H), 0.69(2H).

[0081] Step 2. Preparation of 1-(bis(dimethylamino)chlorosilyl)-2-(bis(dimethylamino...

example 2

[0094] Example 2: Preparation of 1-((bicycloheptenyl)diethoxysilyl)-2-(methyldiethoxysilyl)ethane

[0095] Step 1. Preparation of 1-(trichlorosilyl)-2-(methyldichlorosilyl)ethane

[0096] Trichlorovinylsilane (200g, 1.24mol, 1.0 equivalent) and chloroplatinic acid (H 2 Cl 6 Pt 6H 2 O) Added to a flame-dried 3000 mL Schlenk flask, and then heated the reaction solution to 60°C. Dichloromethylsilane (156.7 g, 1.36 mol, 1.1 equiv) was slowly added to the reaction solution. The mixed solution was refluxed for 8 hours to obtain MeCl 2 Si-CH 2 CH 2 -SiCl 3 (384.81 g, yield: 98%).

[0097] 1 H-NMR (C 6 D. 6 )δ0.21(3H), 0.86(2H), 1.06(2H).

[0098] Step 2. Preparation of 1-(bis(dimethylamino)chlorosilyl)-2-(bis(dimethylamino)methylsilyl)ethane

[0099] 1-(trichlorosilyl)-2-(methyldichlorosilyl)ethane (384.81g, 1.39mol, 1.0 equivalent) prepared in step 1 and n-pentane (3000mL) were added to the flame-dried 5000 mL Schlenk flask, and dimethylamine (501.87 g, 11.13 mol, 8.0 ...

example 3

[0111] Example 3: Preparation of 1-(phenylethoxymethylsilyl)-2-(methyldiethoxysilyl)ethane

[0112] Step 1. Preparation of Diethylaminomethylphenylchlorosilane

[0113] Pentane (1500 mL) and dichloromethylphenylsilane (150 g, 0.79 mol, 1.0 equiv) were added to a flame-dried 5000 mL Schlenk flask, and diethylamine (114.8 g, 1.57 mol, 2.0 equivalents), while maintaining the temperature at 0°C. The reaction solution was warmed to room temperature (20° C.) and stirred for 12 hours. The reaction solution was filtered, the solvent was removed under reduced pressure, and then diethylaminomethylphenylchlorosilane (159.12 g, yield: 89%) was obtained.

[0114] 1 H-NMR (C 6 D. 6 )δ0.5(3H), 0.89(6H), 2.75(4H), 7.16(3H), 7.78(2H).

[0115] Step 2. Preparation of Diethylaminomethylsilane

[0116] LiAlH 4 (7.42 g, 0.2 mol, 0.28 equiv) was added to a flame-dried 3000 mL Schlenk flask, and THF (1500 mL) was added to the flask while maintaining the temperature at -10 °C. The ethylamino...

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Abstract

The invention provides a method for forming a dielectric layer and a method for manufacturing a semiconductor device. The method for forming the dielectric layer comprises the steps of forming an initial dielectric layer on a substrate by using a silicon precursor and carrying out energy processing on the initial dielectric layer to form a dielectric layer. In the dielectric layer, the ratio of aSi-CH3 bonding unit and a Si-O bonding unit is within a range of 0.5-5. The dielectric layer has a relatively low dielectric constant and relatively high mechanical strength.

Description

technical field [0001] Some example embodiments of the present invention relate to a semiconductor device and a method of manufacturing the same, and in particular, to a method of forming a low-k dielectric layer using a silicon precursor and a method of manufacturing a semiconductor device using the method. Background technique [0002] Semiconductor devices are important elements in the electronics industry due to their relatively small size, versatility, and / or relatively low cost characteristics. In general, semiconductor devices are classified into storage devices for storing data, logic devices for processing data, and hybrid devices for performing various functions. [0003] With the development of the electronic industry, semiconductor devices with higher integration density and higher performance are more and more required. In order to meet this demand, it is necessary to reduce the process margin (for example, in the photolithography process). Although many studi...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/768
CPCH01L21/02211H01L21/02216H01L21/02271H01L21/0228H01L21/76801
Inventor 黄宣惠金铭云曹仑廷李相益全相勇郑仁京郑元雄崔晶植
Owner SAMSUNG ELECTRONICS CO LTD
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