Carbon nanotube thin film transistor taking photoresist as gate insulation layer and fabrication and application of carbon nanotube thin film transistor

Abstract

The invention relates to the field of research and application of a gate insulation layer material of a novel carbon nanotube thin film transistor, in particular to a carbon nanotube thin film transistor employing photoresist as a gate insulation layer and fabrication and application of carbon nanotube thin film transistor used as a storage device. Deposition and patterning of the gate insulationlaser are achieved by a spinning and photoetching process, the fabrication technology is simple in process, and the obtained dielectric material can be used as the high-performance gate insulation layer of the transistor. The carbon nanotube thin film transistor employing the photoresist as the gate insulation layer has favorable electrical performance of low working voltage, relatively high current ratio and carrier mobility; after the carbon nanotube thin film transistor is mechanically bent for 5,000 times, stable electrical property of the device is maintained, the gate is small in currentleakage and is stable, and excellent insulation performance and favorable flexibility of the photoresist gate insulation layer are shown; and meanwhile, the carbon nanotube thin film transistor taking cured photoresist as the gate insulation layer and a passivation layer can obtain a stable hysteresis effect and is used for building a memory device.

Description

technical field [0001] The invention relates to the field of research, development and application of a novel carbon nanotube thin film transistor gate insulating layer material, in particular to a carbon nanotube thin film transistor using photoresist as a gate insulating layer and its manufacture and application as a storage device. Background technique [0002] Since their discovery, carbon nanotubes have become one of the most promising semiconductor channel materials for thin-film transistors in the field of flexible electronics due to their excellent optical, electrical, and mechanical properties. In the past ten years, scientists and researchers have conducted a lot of in-depth and detailed research on the application of flexible carbon nanotube thin film transistor devices in integrated circuits, active matrix displays, and sensors, effectively promoting the development of carbon nanotube thin film transistors. Developments in the field of flexible electronics. Howe...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a carbon nanotube thin film transistor using photoresist as the gate insulating layer and its production and application as a storage device, which simplifies the cumbersome preparation process of the traditional gate insulating layer and solves its flexibility. Limitation issues, enabling continuous deposition and patterning of the gate insulating layer

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