Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bi2S3/TiO2 composite nanorod array and preparation method thereof

A nanorod array and composite material technology, which is applied in the field of Bi2S3/TiO2 composite nanorod array and preparation, can solve the problems of easy photolysis and other problems, and achieve the goals of inhibiting photolysis, highlighting photoelectric performance, improving stability and photoelectric performance Effect

Inactive Publication Date: 2018-11-06
HEFEI UNIV
View PDF8 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the preparation process Bi(NO 3 ) 3 Very easy to hydrolyze, and the prepared Bi 2 S 3 easily photolyzed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bi2S3/TiO2 composite nanorod array and preparation method thereof
  • Bi2S3/TiO2 composite nanorod array and preparation method thereof
  • Bi2S3/TiO2 composite nanorod array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] TiO 2 Nanorod array (TNR) preparation: adding tetrabutyl titanate to hydrochloric acid solution and stirring to obtain a clear solution, the concentration of the hydrochloric acid solution is 18wt%, and the volume ratio of tetrabutyl titanate to hydrochloric acid solution is 1:60 Afterwards, the FTO glass cleaned and dried by acetone, ethanol and deionized water is placed obliquely in the polytetrafluoroethylene liner, the conductive surface of the FTO glass is facing downward, and then the clarified solution is poured into the inner container. The liner is sealed in the autoclave, and the autoclave is placed in an oven at 150°C for 12 hours. After it is cooled to room temperature, the FTO glass is taken out and rinsed with deionized water to remove residual reaction. solution; then the FTO glass is annealed at 450°C, the annealing heating rate is controlled to be 2°C / min, and finally the TiO adhered on the surface of the FTO glass is obtained 2 nanorod arrays.

[002...

Embodiment 2

[0034] TiO 2 Nanorod array preparation: adding tetrabutyl titanate to hydrochloric acid solution and stirring to obtain a clear solution, the concentration of the hydrochloric acid solution is 15wt%, and the volume ratio of tetrabutyl titanate to hydrochloric acid solution is 1:58; The FTO glass that has been ultrasonically cleaned and dried by acetone, ethanol, and deionized water is placed obliquely in a polytetrafluoroethylene liner, with the conductive surface of the FTO glass facing down, and then the clarified solution is poured into the liner, Seal the liner in an autoclave, place the autoclave in an oven at 145°C for 11 hours, and take out the FTO glass after cooling to room temperature and rinse it with deionized water to remove the residual reaction solution; then The FTO glass is annealed at 430°C, and the annealing heating rate is controlled to be 1.5°C / min, and finally the TiO adhered on the surface of the FTO glass is obtained. 2 nanorod arrays.

[0035] Bi 2 ...

Embodiment 3

[0041] TiO 2 Nanorod array preparation: adding tetrabutyl titanate to hydrochloric acid solution and stirring to obtain a clear solution, the concentration of the hydrochloric acid solution is 20wt%, and the volume ratio of tetrabutyl titanate to hydrochloric acid solution is 1:62; The FTO glass that has been ultrasonically cleaned and dried by acetone, ethanol, and deionized water is placed obliquely in a polytetrafluoroethylene liner, with the conductive surface of the FTO glass facing down, and then the clarified solution is poured into the liner, Seal the liner in an autoclave, place the autoclave in an oven at 155°C for 13 hours, take out the FTO glass after cooling to room temperature and rinse with deionized water to remove the residual reaction solution; then The FTO glass is annealed at 470°C, the annealing heating rate is controlled at 2.5°C / min, and finally the TiO adhered on the surface of the FTO glass is obtained. 2 nanorod arrays.

[0042] Bi 2 S 3 / TiO 2 P...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a Bi2S3 / TiO2 composite nanorod array and a preparation method thereof. In the Bi2S3 / TiO2 composite nanorod array preparation process, mercaptopropionic acid is used as a stabilizer to effectively inhibit hydrolysis of Bi(NO3)3, meanwhile sulfur vapor is utilized to replace a sodium sulfide aqueous solution to inhibit photolysis of a Bi2S3 quantum dot, so that the stabilityand the optical and electrical performance of the Bi2S3 / TiO2 composite nanorod array are greatly improved. Compared with a pure TiO2 nanorod array (TNR) and a Bi2S3 / TiO2 composite nanorod array without a ZnSe passivation layer, the prepared Bi2S3 / TiO2 composite nanorod array containing the ZnSe passivation layer has more prominent optical and electrical performance.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials, in particular to a Bi 2 S 3 / TiO 2 Composite material nanorod array and preparation method. Background technique [0002] TiO 2 Non-toxic, high catalytic activity, and low price, it is an important wide band gap semiconductor material, but its large band gap and high electron-hole recombination rate limit its application. Using narrow-bandgap semiconductors to recombine them can expand their absorption spectrum and suppress the recombination of photogenerated charges, which is a promising method. Bi 2 S 3 It is an n-type semiconductor with a band gap of 1.3eV, and it is a good photoelectric material. Bi 2 S 3 / TiO 2 Composite materials can extend the absorption of sunlight by materials. Preparation of Bi in prior art 2 S 3 / TiO 2 Composite approach for TiO on the FTO surface 2 Fabrication of Bi on the Surface of Nanorod Arrays 2 S 3 Nanoparticles, namely: the Bi(NO 3 ) 3 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
CPCC03C17/347C03C17/3476C03C2217/212C03C2217/241C03C2217/288C03C2217/289C03C2217/70
Inventor 杨蕾王壮尹奇异鲁红典张全争张凌云秦广超田长安
Owner HEFEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com