Light emitting diode packing structure and method
A technology of light-emitting diodes and packaging structures, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high color rendering and high luminous efficiency, decreased luminous efficiency, and low color rendering index at the same time, so as to improve light extraction efficiency, The effect of avoiding mutual absorption and concentrating light output
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Embodiment 1
[0057] The packaging method of this embodiment is as follows: figure 1 As shown, the schematic diagram of the LED package structure is shown in figure 2 shown.
[0058] The heat dissipation substrate (228) is a copper substrate, the LED chip (220) is a blue light chip, the peak wavelength is located at 450-452nm, the first filter layer (221) is a red light filter film, and the first buffer layer (222) is a silicon Resin glue, the first fluorescent powder glue layer (223) is a mixture of silica gel and nitride red powder (peak wavelength: 625nm); the second filter layer (224) is a green light filter film, and the second buffer layer (225) is Silicone resin glue; the second fluorescent powder glue layer is a mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Embodiment 2
[0060] The packaging method and structure of this embodiment are the same as those of Embodiment 1.
[0061] Wherein the heat dissipation substrate (228) is an AlN substrate, the LED chip (220) is a blue light chip, the peak wavelength is located at 450-452nm, the first filter layer (221) is a red light filter film, and the first buffer layer (222) is a silicon Resin glue, the first fluorescent powder glue layer (223) is a mixture of silica gel and nitride red powder (peak wavelength: 625nm); the second filter layer (224) is a green light filter film, and the second buffer layer (225) is Silicone resin glue; the second fluorescent powder glue layer is a mixture of silica gel and aluminate green powder (peak wavelength 530nm).
Embodiment 3
[0063] The packaging method and structure of this embodiment are the same as those of Embodiment 1.
[0064] Wherein the heat dissipation substrate (228) is an AlN / BN composite substrate, the LED chip (220) is a blue light chip, the peak wavelength is located at 450-452nm, the first filter layer (221) is a red light filter film, and the first buffer layer (222 ) is silicone resin glue, the first fluorescent powder glue layer (223) is a mixture of silica gel and nitride red powder (peak wavelength: 625nm); the second filter layer (224) is a green light filter film, and the second buffer layer ( 225) is silicone resin glue; the second fluorescent powder glue layer is a mixture of silica gel and aluminate green powder (peak wavelength 530nm).
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