A light-emitting diode packaging structure and packaging method
A technology of light-emitting diodes and packaging structures, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of high color rendering and high light efficiency, light effect decline, and low color rendering index, etc., to improve light extraction efficiency, Avoid the effect of mutual absorption and concentrate light output
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Embodiment 1
[0055] The packaging method of this embodiment is as follows: figure 1 As shown, the schematic diagram of the LED package structure is shown in figure 2 shown.
[0056] The heat dissipation substrate 228 is a copper substrate, the LED chip 220 is a blue light chip, the peak wavelength is located at 450-452nm, the first filter layer 221 is a red light filter film, the first buffer layer 222 is silicone resin glue, and the first fluorescent powder glue Layer 223 is a mixture of silica gel and nitride red powder (peak wavelength: 625nm); the second filter layer 224 is a green light filter film, and the second buffer layer 225 is silicone resin glue; the second phosphor powder glue layer 226 is silica gel and Mixture of aluminate green powder (peak wavelength 530nm).
Embodiment 2
[0058] The packaging method and structure of this embodiment are the same as those of Embodiment 1.
[0059] The heat dissipation substrate 228 is an AlN substrate, the LED chip 220 is a blue light chip, and the peak wavelength is located at 450-452nm, the first filter layer 221 is a red light filter film, the first buffer layer 222 is silicone resin glue, and the first fluorescent powder glue Layer 223 is a mixture of silica gel and nitride red powder (peak wavelength: 625nm); the second filter layer 224 is a green light filter film, and the second buffer layer 225 is silicone resin glue; the second phosphor powder glue layer 226 is silica gel and Mixture of aluminate green powder (peak wavelength 530nm).
Embodiment 3
[0061] The packaging method and structure of this embodiment are the same as those of Embodiment 1.
[0062] The heat dissipation substrate 228 is an AlN / BN composite substrate, the LED chip 220 is a blue light chip, the peak wavelength is located at 450-452nm, the first filter layer 221 is a red light filter film, the first buffer layer 222 is silicone resin glue, and the first Phosphor powder glue layer 223 is a mixture of silica gel and nitride red powder (peak wavelength: 625nm); the second filter layer 224 is a green light filter film, and the second buffer layer 225 is silicone resin glue; the second phosphor powder glue layer 226 It is a mixture of silica gel and aluminate green powder (peak wavelength 530nm).
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