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A nanoscale sound wave generator

A sound wave generator and a technology for generating sound waves, which are applied in nano-carbon, chemical instruments and methods, fluids using vibration, etc., can solve the problems of poor sound regulation, poor temperature resistance of thin films, and large structural defects, and achieve good sound quality, The effect of fast heating rate and fewer defects

Active Publication Date: 2020-02-07
HANGZHOU GAOXI TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above two films have inevitable defects. First, the structural defects are large and the heating rate is slow; second, the thickness is high and the cooling rate is slow, so the sound clarity is poor; third, the temperature resistance of the film is relatively low Poor, poor sound adjustment

Method used

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  • A nanoscale sound wave generator
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  • A nanoscale sound wave generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 0.5ug / mL, and a hydrophilic polytetrafluoroethylene membrane was used as a substrate to form a membrane by suction filtration.

[0028] (2) Put the graphene oxide film attached to the hydrophilic polytetrafluoroethylene film in a closed container, and fumigate from the bottom to the top for 1 hour at a high temperature of 80 degrees HI.

[0029] (3) The melted solid transfer agent camphor is uniformly coated on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cooled at room temperature, and the film and the substrate are separated.

[0030] (4) Slowly volatilize the solid transfer agent from the graphene film supported by the solid transfer agent obtained above at 40 degrees to obtain an independent self-supporting graphene film.

[0031] (5) Spraying a layer of metal titanium on the surface of the chemically reduced graphene film by mea...

Embodiment 2

[0038] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 10ug / mL, and the PC film was used as the substrate to form a film by suction filtration.

[0039] (2) Put the graphene oxide film attached to the PC film in a closed container, and fumigate from the bottom to the top at 100 degrees HI for 0.1 h.

[0040] (3) Uniformly coat the melted solid transfer agent naphthalene on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cool it at room temperature.

[0041] (4) Slowly volatilize the graphene film supported by the solid transfer agent obtained above at 80 to obtain an independent self-supporting graphene film.

[0042] (5) Spraying a layer of metal titanium on the surface of the chemically reduced graphene film by means of magnetron sputtering. By controlling the sputtering parameters, the molar weight of the finally sputtered metal nanoparticles is 18.4% of the molar weight of carbon atoms...

Embodiment 3

[0049] (1) Graphene oxide was formulated into a graphene oxide aqueous solution with a concentration of 1 ug / mL, and a hydrophilic polytetrafluoroethylene membrane was used as a substrate to form a film by suction filtration.

[0050] (2) Put the graphene oxide film attached to the hydrophilic polytetrafluoroethylene in a closed container, and fumigate at a high temperature of 90 degrees HI from the bottom up for 0.5h.

[0051] (3) Uniformly coat the melted solid transfer agent sulfur on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cool it at room temperature.

[0052] (4) Slowly volatilize the graphene film supported by the solid transfer agent obtained above at 120 degrees to obtain an independent self-supporting graphene film.

[0053] (5) Spray one layer of metal cobalt on the graphene film surface of chemical reduction with the mode of magnetron sputtering, by controlling the sputtering parameter, the molar weight of the metal n...

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Abstract

The invention discloses a nanometer-level sound generator. The nanometer-level sound generator comprises a substrate having thermal conductivity being lower than 200 W / mK, a sound wave generation membrane at the substrate, two elargol electrodes used for inputting audio frequency current and an electric signal inputting unit, two elargol electrodes are respectively arranged at two ends of the sound wave generation membrane, and the sound wave generation membrane, two elargol electrodes and an electric signal input unit form a loop by connecting in series; the sound wave generation membrane isa graphene membrane, the thickness is not greater than 60 nm, the density is 2.0-2.2 g / cm<3>, the graphene realizes interlayer crosslinking, and the crosslinking degree is 1-5%. The graphene membranehas excellent electrothermal performance and thermal conductivity, and effectively induces the thermal agitation of air at the membrane. The sounder has the advantages of good tone quality and high sound sharpness.

Description

technical field [0001] The invention relates to a high-performance nanometer material and a preparation method thereof, in particular to a nanoscale sound wave generator. Background technique [0002] In 2010, two professors Andre GeiM and Konstantin Novoselov from the University of Manchester won the Nobel Prize in Physics for their first successful separation of stable graphene, which set off a wave of research on graphene around the world. Graphene has excellent electrical properties (electron mobility up to 2×105cM2 / Vs at room temperature), outstanding performance (5000W / (MK), extraordinary specific surface area (2630M2 / g), and its Young’s modulus (1100GPa) and breaking strength (125GPa). The excellent electrical and thermal conductivity of graphene completely exceeds that of metals. At the same time, graphene has the advantages of high temperature resistance and corrosion resistance, and its good mechanical properties and low density make it have the potential to replac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184C01B32/194B06B1/02
CPCB06B1/02C01B32/184C01B32/194
Inventor 高超彭蠡刘一晗郭燕
Owner HANGZHOU GAOXI TECH CO LTD
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