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An interface modification method to eliminate hysteresis in perovskite batteries

A technology of perovskite batteries and hysteresis, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of complex synthesis, long preparation time, interlayer erosion, etc., and achieve simplified preparation process, crystallization and grain growth Good, crystallization and grain growth promotion effect

Active Publication Date: 2021-08-03
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the shortcomings of the above-mentioned prior art, such as long preparation time of interface materials, interlayer erosion, and complex synthesis, etc., and better solve the hysteresis phenomenon of perovskite batteries, the purpose of the present invention is to provide a method for eliminating the hysteresis of perovskite batteries. Interface Modification Methods of Phenomena

Method used

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  • An interface modification method to eliminate hysteresis in perovskite batteries
  • An interface modification method to eliminate hysteresis in perovskite batteries
  • An interface modification method to eliminate hysteresis in perovskite batteries

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Embodiment 1

[0030] An interface modification method for eliminating hysteresis in perovskite batteries, comprising the following steps:

[0031] (1) Configuration of the solution: add PC61BM powder to chlorobenzene, after stirring evenly, add the chlorobenzene solution containing PC61BM into BAMB powder, stir evenly to obtain a mixed solution of PC61BM and BAMB; wherein, PC61BM powder The solid-liquid ratio of chlorobenzene and chlorobenzene is 10mg / mL, and the solid-liquid ratio of BAMB powder and chlorobenzene is 5mg / mL;

[0032] (2) Drop the mixed solution onto FTO / TiO 2 On the substrate, a layer of film is formed by the method of uniform glue, followed by heat treatment to realize the crosslinking of the two materials, that is, the formation of the interface.

[0033] The specific operation during step (2) is to place the substrate on the glue homogenizer to rotate the glue evenly at 4000 per minute for 10-50 seconds;

[0034] The heat treatment in step (2) is heat treatment at 160°...

Embodiment 2

[0036]A method for preparing an interface that eliminates the hysteresis of a perovskite cell, comprising the following steps:

[0037] (1) Configuration of the solution: add PC61BM powder to chlorobenzene, after stirring evenly, add the chlorobenzene solution containing PC61BM into BAMB powder, stir evenly to obtain a mixed solution of PC61BM and BAMB; wherein, PC61BM powder The solid-liquid ratio of chlorobenzene and chlorobenzene is 10mg / mL, and the solid-liquid ratio of BAMB powder and chlorobenzene is 5mg / mL;

[0038] (2) Drop the mixed solution onto FTO / TiO 2 On the substrate, a layer of film is formed by the method of uniform glue, and then treated by ultraviolet light irradiation to realize the crosslinking of the two materials, that is, the formation of the interface.

[0039] The specific operation during step (2) is to place the substrate on the glue homogenizer to rotate the glue evenly at 4000 per minute for 10-50 seconds;

[0040] The ultraviolet light irradiat...

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Abstract

The invention discloses an interface modification method for eliminating the hysteresis phenomenon of perovskite solar cells. Fullerene derivatives are solidified by photothermal crosslinking to form an interface modification layer, thereby eliminating the hysteresis effect of perovskite solar cells. The steps are as follows: (1) first prepare the mixed solution of 6,6-phenyl-C61 methyl butyrate and 4,4'-bis(azidomethyl)-1,1'-biphenyl; (2) combine step (1 ) is dripped onto the substrate, and after homogenization, heat treatment or ultraviolet light treatment is performed to solidify to form an interface modification layer. The method is simple and quick, and the prepared interface layer has the advantages of good hydrophobicity and high stability. The perovskite device prepared by this method overcomes the hysteresis effect and obtains excellent device performance.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and technologies, and in particular relates to an interface modification method for eliminating the hysteresis phenomenon of a perovskite battery. Background technique [0002] In recent years, new solar cells using perovskite as light-absorbing materials have developed rapidly, and different device structures have been prepared. According to the position of the hole transport layer and the electron transport layer, they are classified into two types: upright devices and inverted devices. Large categories, and the conversion efficiency is continuously improved, with great commercial application prospects. [0003] Upright devices were first based on mesoporous TiO as a nanoframe material 2 and dense TiO as an electron transport material 2 prepared, here TiO 2 The layer plays a key role, as its energy level matches that of the perovskite and is effective at blocking holes. This upright de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48
CPCH10K71/12H10K71/421H10K71/40Y02E10/549
Inventor 赖文勇雷刚徐巍栋黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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