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Solar cell and preparation method therefor

A solar cell, N-type technology, applied in the field of solar cells, can solve the problems of reduced photoelectric conversion efficiency of organic-inorganic hybrid solar cells, poor film formation quality of organic material layers, low photoelectric conversion efficiency of solar cells, etc. Conversion efficiency, improved quality, improved transmission path effect

Active Publication Date: 2018-11-23
JIANGSU RIYU PHOTOVOTTAIC NEW MATERIAL TECH CO LTD
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Problems solved by technology

[0002] In the preparation process of existing organic-inorganic hybrid solar cells, silicon nanowire arrays are usually prepared on the upper surface of the n-type silicon wafer, and then the n-type silicon wafer is methylated, and then the n-type silicon The front side of the sheet is spin-coated with P3HT solution or Spiro-OMeTAD solution, and annealed to form a P3HT layer or Spiro-OMeTAD layer, then spin-coated PEDOT:PSS solution on the surface of the P3HT layer or Spiro-OMeTAD layer, and annealed to form Form a PEDOT:PSS layer, then prepare a front gate electrode on the front side of the n-type silicon wafer and prepare a back electrode on its back side. The photoelectric conversion efficiency of existing organic-inorganic hybrid solar cells is low, and due to the P3HT layer, Spiro-OMeTAD Organic material layers such as layers and PEDOT:PSS layers are formed on the silicon nanowire array. When the area of ​​the n-type silicon chip increases, the film-forming quality of the organic material layer will deteriorate, which further leads to the organic-inorganic hybrid solar cell The photoelectric conversion efficiency decreases

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  • Solar cell and preparation method therefor

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preparation example Construction

[0026] A kind of preparation method of solar cell that the present invention proposes, comprises the following steps:

[0027] 1) Provide N-type monocrystalline silicon wafers, carry out texturing treatment to the N-type monocrystalline silicon wafers, and form a pyramid-structured textured layer on the upper surface of the N-type monocrystalline silicon wafers;

[0028] 2) Depositing an N-type amorphous silicon layer on the upper surface of the N-type single crystal silicon wafer, and then converting the N-type amorphous silicon layer into an N-type polysilicon layer through heat treatment, wherein the doping concentration of the N-type polysilicon layer is less than The doping concentration of the N-type monocrystalline silicon wafer, specifically, the heat treatment temperature is 600-800°C, the heat treatment time is 20-40 minutes, and the thickness of the N-type polysilicon layer is 20-30 nanometers;

[0029] 3) depositing an inorganic insulating thin layer on the surface...

Embodiment 1

[0039] A method for preparing a solar cell, comprising the steps of:

[0040] 1) Provide N-type monocrystalline silicon wafers, carry out texturing treatment to the N-type monocrystalline silicon wafers, and form a pyramid-structured textured layer on the upper surface of the N-type monocrystalline silicon wafers;

[0041] 2) Depositing an N-type amorphous silicon layer on the upper surface of the N-type monocrystalline silicon wafer, and then converting the N-type amorphous silicon layer into an N-type polysilicon layer through heat treatment, wherein the doping concentration of the N-type polysilicon layer is less than The doping concentration of the N-type monocrystalline silicon wafer, specifically, the heat treatment temperature is 700°C, the heat treatment time is 30 minutes, and the thickness of the N-type polysilicon layer is 25 nanometers;

[0042] 3) depositing an inorganic insulating thin layer on the surface of the N-type polysilicon layer, the thickness of the ino...

Embodiment 2

[0052] A method for preparing a solar cell, comprising the steps of:

[0053] 1) Provide N-type monocrystalline silicon wafers, carry out texturing treatment to the N-type monocrystalline silicon wafers, and form a pyramid-structured textured layer on the upper surface of the N-type monocrystalline silicon wafers;

[0054] 2) Depositing an N-type amorphous silicon layer on the upper surface of the N-type monocrystalline silicon wafer, and then converting the N-type amorphous silicon layer into an N-type polysilicon layer through heat treatment, wherein the doping concentration of the N-type polysilicon layer is less than The doping concentration of the N-type monocrystalline silicon wafer, specifically, the heat treatment temperature is 600°C, the heat treatment time is 40 minutes, and the thickness of the N-type polysilicon layer is 30 nanometers;

[0055] 3) depositing an inorganic insulating thin layer on the surface of the N-type polysilicon layer, the thickness of the ino...

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Abstract

The invention relates to a solar cell and a preparation method therefor. The method comprises the following steps: performing a texturing process on an N-type single crystal silicon wafer; forming anN-type polysilicon layer on an upper surface of the N-type single crystal silicon wafer, such that the doping concentration of the N-type polysilicon layer is smaller than the doping concentration ofthe N-type single crystal silicon wafer; and forming an inorganic insulating thin layer, a first Spiro-OMeTAD layer, a second Spiro-OMeTAD layer, a first PEDOT:PSS layer and a second PEDOT:PSS layer on the surface of the N-type polysilicon layer; next, preparing a front side silver gate electrode on the upper surface of the N-type single crystal silicon wafer and preparing a back surface aluminumelectrode on the lower surface of the n-type silicon wafer. The solar cell has excellent photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof. Background technique [0002] In the preparation process of existing organic-inorganic hybrid solar cells, silicon nanowire arrays are usually prepared on the upper surface of the n-type silicon wafer, and then the n-type silicon wafer is methylated, and then the n-type silicon The front side of the sheet is spin-coated with P3HT solution or Spiro-OMeTAD solution, and annealed to form a P3HT layer or Spiro-OMeTAD layer, then spin-coated PEDOT:PSS solution on the surface of the P3HT layer or Spiro-OMeTAD layer, and annealed to form Form a PEDOT:PSS layer, then prepare a front gate electrode on the front side of the n-type silicon wafer and prepare a back electrode on its back side. The photoelectric conversion efficiency of existing organic-inorganic hybrid solar cells is low, and due to the P3HT layer, Spiro-OMeTAD Organic mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46
CPCH10K71/00H10K30/10H10K30/80Y02E10/549Y02P70/50
Inventor 张军
Owner JIANGSU RIYU PHOTOVOTTAIC NEW MATERIAL TECH CO LTD
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