Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of microdisk Raman laser and its manufacturing method

A technology of a Raman laser and a manufacturing method, which is applied in the field of lasers, can solve the problems of low etching accuracy and poor repeatability, and achieve the effects of improving etching accuracy, facilitating on-chip integration, and strong process repeatability

Active Publication Date: 2021-04-20
NANJING UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a micro-disk Raman laser and its manufacturing method to solve the problems of low etching precision and poor repeatability of existing micro-cavity Raman lasers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of microdisk Raman laser and its manufacturing method
  • A kind of microdisk Raman laser and its manufacturing method
  • A kind of microdisk Raman laser and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.

[0039] An embodiment of the present invention provides a method for manufacturing a microdisk Raman laser, referring to figure 1 , figure 1 It is a schematic flow chart of a method for manufacturing a microdisk Raman laser provided by an embodiment of the present invention, and the method for manufacturing a microdisk Raman laser includes:

[0040] S101 , coating a photoresist on a substrate; wherein, the substrate includes a semiconductor base, and an oxide semiconductor layer is formed on the semiconductor base...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The embodiment of the invention discloses a microdisk Raman laser and a manufacturing method thereof. Wherein, the microdisk Raman laser includes: coating photoresist on the substrate; wherein, the substrate includes a semiconductor substrate, and an oxide semiconductor layer is formed on the semiconductor substrate; a mask plate provided with a circular hollow pattern is used as a mask film, performing photolithography and development on the photoresist to obtain a photoresist disc; using the photoresist disc as a mask, performing plasma etching on the oxide semiconductor layer to obtain an oxide semiconductor Microdisk: cleaning the photoresist disc on the oxide semiconductor microdisk; using the oxide semiconductor microdisk as a mask, etching the semiconductor substrate to form support columns supporting the oxide semiconductor microdisk . The technical solutions provided by the embodiments of the present invention can solve the problems of low etching precision and poor repeatability of existing microcavity Raman lasers.

Description

technical field [0001] Embodiments of the present invention relate to the field of laser technology, in particular to a microdisk Raman laser and a manufacturing method thereof. Background technique [0002] Raman laser can be formed by resonance of a certain frequency of laser in an optical microcavity in a certain way and degree. Whispering gallery mode optical microcavity is a tiny device that can bind light beams in a certain space and time. Because it has a high quality factor Q and a small mode volume, it can greatly reduce the intensity of stimulated emission of laser light. The threshold value of the power can achieve extremely low threshold Raman laser in whispering gallery mode. Raman lasers have great application potential in optical platforms, and have important applications in spectral analysis, laser sensing, optical communication, and environmental monitoring. [0003] In the prior art, an ultra-low threshold Raman laser is realized by using a silicon oxide ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/02
CPCH01S5/0203H01S5/0206
Inventor 姜校顺李昊程欣宇顾佳新肖敏
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com