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IDT copper process manufacturing method for high-frequency surface acoustic wave (SAW)

A manufacturing method and process technology, which is applied in the field of surface acoustic wave filter manufacturing, can solve problems such as the inability to complete the exposure and stripping process, limit the application of SAW products, and difficult to control the electrode shape, and achieve easy to achieve, performance improvement, and small insertion The effect of loss

Active Publication Date: 2018-11-30
XIAMEN SANAN INTEGRATED CIRCUIT
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Problems solved by technology

However, due to the limitation of negative photoresist and stripping process, when the IDT electrode line width is less than 0.5 μm, the exposure and stripping process is basically impossible to complete, and the shape of the electrode is difficult to control, which limits the application of SAW products in the high frequency field
[0004] In high-frequency applications, BAW (bulk acoustic wave) technology is currently mainly used, and BAW technology requires more than a dozen photolithography processes, which is cumbersome and complicated, and the cost is high

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  • IDT copper process manufacturing method for high-frequency surface acoustic wave (SAW)

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Embodiment Construction

[0028] Combine the following figure 1 The process flow diagram of the IDT copper process manufacturing method of the high frequency SAW of the present invention is shown to illustrate the present invention in detail.

[0029] Referring to 1a, a piezoelectric material substrate 1 is provided, which may be, for example, a lithium tantalate or a lithium tantalate-on-silicon crystal or the like.

[0030] refer to figure 1 b, depositing a dielectric material on the substrate 1 to form a first dielectric layer 2 . Dielectric materials include SiO 2 , Si 3 N 4 , Si x N y etc., deposited by methods such as CVD / PVD. The thickness of the first dielectric layer 2 ranges from 100 to 500 nm, for example, the reference is 300 nm. The thickness of the first dielectric layer 2 defines the thickness of the IDT metal, which can be adjusted according to product design requirements.

[0031] refer to figure 1 c. Coat positive photoresist, define the IDT pattern after exposure and develo...

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Abstract

The invention discloses an IDT copper process manufacturing method for a high-frequency surface acoustic wave (SAW). The method includes the following steps: forming a first dielectric layer on a piezoelectric substrate, forming an IDT pattern morphology on the first dielectric layer by positive photoresist exposure and dry etching, depositing an IDT metal layer, and then grinding the IDT metal layer by adopting a CMP process to form a corresponding IDT metal structure, and depositing a second dielectric layer after etching the first dielectric layer. According to the scheme of the invention,by combining the positive photoresist with the dry etching and the CMP process, the metal patterning and IDT metal morphology control can be effectively realized, the requirements of IDT electrodes with a smaller line width can be met, the target frequency can be achieved more easily, and moreover, the method is simple in process and high in controllability, and greatly reduces the cost.

Description

technical field [0001] The invention relates to the technical field of manufacturing surface acoustic wave filters, in particular to a method for manufacturing a high-frequency SAW IDT copper process. Background technique [0002] Surface Acoustic Wave (SAW) filters are widely used in signal receiver front ends as well as in duplexers and receive filters. The SAW filter combines low insertion loss with good rejection, enabling wide bandwidth and small size. In conventional SAW filters, the electrical input signal is converted into acoustic waves by intervening metallic interdigital transducers (IDTs), which are formed on a piezoelectric substrate. [0003] When the interdigital transducer structure of the existing surface acoustic wave filter is fabricated, a lift-off process (LIFT-OFF) is generally used, that is, a negative photoresist is used on the substrate to form a pattern through exposure and development, and then a pattern is formed on the substrate. A metal film i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02
CPCH03H3/02H03H2003/023
Inventor 邹福松杨濬哲朱庆芳尚荣耀谢祥政蔡文必
Owner XIAMEN SANAN INTEGRATED CIRCUIT
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