The present invention provides a preparation method of a selective emitter dual-face PERC battery. A current PERC
production line machine bench is employed to reduce the preparation cost. The method comprises the following steps: S1, performing dual-face texture surface making of a
silicon chip; S2, performing
oxide layer or
silicon nitride layer protection of the right side of the
silicon chip; S3, according to the figure of the grid line of a positive
electrode, performing slotting of the right side of the
silicon chip; S4, performing right side
phosphorus diffusion of the
silicon chip, allowing the blocking of the
oxide layer or the
silicon nitride layer to form a shallow expansion area at an area without slotting, and forming a deep expansion area at the area with slotting to form a selective emitter; S5, performing back
etching or back
polishing of the
silicon chip, and cleaning the phosphorosilicate glass of the surface; S6, performing back
passivation of the silicon
chip, and performing plating of an
antireflection coating at the right side; S7, according to the figure of a back
electrode, performing slotting of the back side of the silicon chip; S8, printing grid lines at the right side and the back side of the silicon chip, wherein the deep expansion area is coated with the grid lines of the right side, the area having the back side with slotting is coated with the grid lines of the back side; and S9, performing
sintering.