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Preparation method of selective emitter dual-face PERC battery

A technology that selects emitter and double-sided, and is applied in photovoltaic power generation, circuits, electrical components, etc., which can solve the problems of increasing production costs and cumbersome process control.

Inactive Publication Date: 2017-09-29
SUZHOU TALESUN SOLAR TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of existing PERC battery selective emitter preparation method requires the addition of new machines or auxiliary materials such as phosphorous slurry, which cannot be completed using the existing PERC conventional production line, which not only increases the production cost but also makes the process control more cumbersome.

Method used

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  • Preparation method of selective emitter dual-face PERC battery

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Embodiment Construction

[0035] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art. It should be noted here that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation to the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0036] Reference attached figure 1 As shown, this embodiment provides a method for preparing a double-sided PERC battery with selective emitters, which specifically goes through the following processes in sequence:

[0037] S1-1. Sodium hydroxide and texturing additives are used for double-sided alkali texturing of monocrystalline silicon wafers, forming a pyra...

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Abstract

The present invention provides a preparation method of a selective emitter dual-face PERC battery. A current PERC production line machine bench is employed to reduce the preparation cost. The method comprises the following steps: S1, performing dual-face texture surface making of a silicon chip; S2, performing oxide layer or silicon nitride layer protection of the right side of the silicon chip; S3, according to the figure of the grid line of a positive electrode, performing slotting of the right side of the silicon chip; S4, performing right side phosphorus diffusion of the silicon chip, allowing the blocking of the oxide layer or the silicon nitride layer to form a shallow expansion area at an area without slotting, and forming a deep expansion area at the area with slotting to form a selective emitter; S5, performing back etching or back polishing of the silicon chip, and cleaning the phosphorosilicate glass of the surface; S6, performing back passivation of the silicon chip, and performing plating of an antireflection coating at the right side; S7, according to the figure of a back electrode, performing slotting of the back side of the silicon chip; S8, printing grid lines at the right side and the back side of the silicon chip, wherein the deep expansion area is coated with the grid lines of the right side, the area having the back side with slotting is coated with the grid lines of the back side; and S9, performing sintering.

Description

Technical field [0001] The invention belongs to the field of solar cells, and particularly relates to a preparation method of a double-sided PERC cell with selective emitters. Background technique [0002] As a kind of clean energy, solar photovoltaic is one of the candidates for future energy solutions. Especially after the development in recent years, its application has become more extensive and the technology has become more mature. Solar cells are energy conversion devices based on semiconductor materials and are the core part of solar power generation. At present, in the field of solar cells, the process technology of crystalline silicon cells is the most mature, and the level of industrialization is the highest. Crystal silicon solar cells are divided into P-type cells and N-type cells. Although N-type monocrystalline silicon cells have low light-induced attenuation and high minority lifetime, It has the advantages of good metal pollution resistance, but the production c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022425H01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 魏青竹陆俊宇刘晓瑞连维飞倪志春孟思霖
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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