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Manufacturing method of flexible transparent electrode

A transparent electrode and manufacturing method technology, applied in the direction of cable/conductor manufacturing, equipment for manufacturing conductive/semiconductive layers, circuits, etc., can solve the problems of poor solubility, cumbersome process, complicated operation, etc., and achieve low cost and low cost. The effect of simple process and good conductivity

Inactive Publication Date: 2018-12-07
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the poor solubility of graphene in aqueous solution and organic solvent, it can only be prepared by chemical vapor deposition or chemical oxidation and then transferred to the substrate. The process is cumbersome and the operation is complicated.

Method used

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  • Manufacturing method of flexible transparent electrode
  • Manufacturing method of flexible transparent electrode
  • Manufacturing method of flexible transparent electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A graphene oxide solution with a concentration of 2.0 mg / ml was prepared using deionized water as a solvent, and was subjected to ultrasonic treatment for 10 h, with an ultrasonic power of 280 W, a temperature of 25° C., and stirring once every ultrasonic 0.5 h. Cut the soda-lime glass substrate into a size of 2.0×2.0cm, clean the cut soda-lime glass with detergent, and then use acetone, isopropanol and deionized water to perform ultrasonic cleaning for 10 minutes. ℃ temperature drying, and then UV ozone treatment for 10min. After the substrate 1 was processed, a spin-coating experiment was performed. First, a graphene oxide solution was spin-coated on a soda-lime glass substrate to form a layer of graphene oxide film 2. The spin-coating speed was 4000 rpm. Then, a silver nanowire solution with a concentration of 10.0 mg / ml was spin-coated on the graphene oxide film to form a silver nanowire film 3 at a spin-coating speed of 1000 rpm. Then the spin-coated two-layer com...

Embodiment 2

[0028] A graphene oxide solution with a concentration of 0.5 mg / ml was prepared using deionized water as a solvent, and was subjected to ultrasonic treatment for 10 h, with an ultrasonic power of 280 W, a temperature of 25° C., and stirring once every ultrasonic 0.5 h. Cut the soda-lime glass substrate into a size of 2.0×2.0cm, clean the cut soda-lime glass with detergent, and then use acetone, isopropanol and deionized water to perform ultrasonic cleaning for 10 minutes. ℃ temperature drying, and then UV ozone treatment for 30min. Spin-coating experiments were carried out after the substrate treatment was completed. First, the graphene oxide solution was spin-coated on the soda-lime glass substrate to form a graphene oxide film. The spin-coating speed was 1000rpm. Then, a silver nanowire solution with a concentration of 2.0 mg / ml was spin-coated on the graphene oxide film to form a layer of silver nanowire film, and the spin-coating speed was 4000 rpm. Then, the spin-coated ...

Embodiment 3

[0031] A graphene oxide solution with a concentration of 1.0 mg / ml was prepared using deionized water as a solvent, and was subjected to ultrasonic treatment for 10 h, with an ultrasonic power of 280 W, a temperature of 25° C., and stirring once every ultrasonic 0.5 h. Cut the PET substrate into a size of 2.0×2.0cm, clean the cut PET with acetone, isopropanol and deionized water in sequence for 10 minutes, and dry the cleaned PET at 80°C, and then treat it with ultraviolet and ozone for 20 minutes . Spin-coating experiments were carried out after the substrate treatment was completed. First, the graphene oxide solution was spin-coated on the PET substrate to form a graphene oxide film. The spin-coating speed was 3000 rpm. Then, a silver nanowire solution with a concentration of 8.0 mg / ml was spin-coated on the graphene oxide film to form a silver nanowire film, and the spin-coating speed was 1000 rpm. Then the spin-coated two-layer composite film was dried at 100 °C for 10 mi...

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Abstract

The present invention discloses a manufacturing method of a flexible transparent electrode. The method comprises the following steps of: spinning at least one layer of oxidized graphene thin film andat least one layer of silver nanowire thin film at the surface of a substrate after cleaning processing in order, and performing thermal processing. The manufacturing method of the flexible transparent electrode spins the at least one layer of oxidized graphene thin film and the at least one layer of silver nanowire thin film at the surface of the substrate through an all-solution method and is simple in manufacturing process and low in cost, the manufactured flexible transparent electrode has good electrical conductivity, good light transmittance, good mechanical stability and good environmental stability.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a method for manufacturing a flexible transparent electrode. Background technique [0002] With the progress of society and the improvement of people's demand for electronic products, light, ultra-thin, flexible and wearable electronic products have received more and more attention. As a basic component of optoelectronic devices, it is particularly important to improve the performance of transparent electrodes. Indium tin oxide (ITO) has become a traditional material for preparing transparent electrodes because of its high conductivity and high light transmittance. However, ITO has disadvantages such as brittleness, high price, and complicated production process in the application of flexible transparent electrodes. In order to solve these problems, researchers have successively reported some alternative materials for ITO, mainly including: metal nanowir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14
CPCH01B5/14H01B13/0026
Inventor 石胜伟李文婷王乐刚
Owner WUHAN INSTITUTE OF TECHNOLOGY
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