A high-sensitivity torsional pendulum silicon micro-accelerometer and its preparation method
A high-sensitivity, accelerometer technology, applied in the direction of velocity/acceleration/shock measurement, measurement of acceleration, instruments, etc., can solve the problem of small effective detection area of sensitive mass, limitations of temperature characteristics and robustness, low device space utilization, etc. problems, to achieve the effect of increasing the effective detection area, improving space utilization, and high processing quality
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[0062] Such as Image 6 As shown, the implementation steps of the preparation method of the high-sensitivity torsion-type silicon micro-accelerometer of the present embodiment include:
[0063] 1) Prepare the first SOI silicon wafer for preparing the silicon substrate 1, such as Image 6 As shown in (a), the device layer thickness of the first SOI silicon chip in this embodiment is 6 microns;
[0064] 2) On the surface of the first SOI silicon wafer, form the capacitance gap between the silicon sensitive structure 2 and the silicon substrate 1 by dry etching the first depth (2 microns), such as Image 6 as shown in (b);
[0065] 3) On the surface of the first piece of SOI silicon wafer, form the capacitor plate assembly 11 and the lead electrode assembly 12 by dry etching the second depth (4 microns), such as Image 6 as shown in (c);
[0066] 4) epitaxially grow a layer of 0.5 micron thick silicon dioxide on the surface of the first SOI silicon wafer, such as Image 6 as...
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