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CMP polishing layer based on porous cerium oxide and preparation method thereof

A technology of cerium oxide and polishing layer, which is applied in the field of CMP polishing layer based on porous cerium oxide and its preparation, can solve the problems of inability to form hollow small holes, easy damage of polymer microspheres, wide range of size distribution, etc., and achieve improvement Grinding and polishing efficiency, good machinability, good effect

Active Publication Date: 2018-12-18
HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the problems referred to above, the object of the present invention is to provide a CMP polishing layer based on porous cerium oxide, to solve the problem of irregular shape of pores in the current polishing pad, wide range of size distribution and easy damage of polymer microspheres, which cause it to be separated from the prepolymer. Problems such as hollow pores cannot be formed after mixing; Another object of the present invention is to provide the above-mentioned preparation method of a CMP polishing layer based on porous cerium oxide, so as to realize the large-scale industrial production of the polishing layer

Method used

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  • CMP polishing layer based on porous cerium oxide and preparation method thereof
  • CMP polishing layer based on porous cerium oxide and preparation method thereof
  • CMP polishing layer based on porous cerium oxide and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Place the mold in an oven to preheat to 50°C, place 5000g of polyurethane prepolymer in a vacuum oven and preheat to 50°C in a vacuum state, then add 70g of porous cerium oxide filler to the polyurethane prepolymer, at 20r Stir and mix at a speed of 1 / min to obtain a mixed prepolymer.

[0032]Transfer the above mixed prepolymer to the first tank, and carry out heat preservation, stirring, and circulation treatment. The temperature inside the first tank is 50°C, and the stirring speed is 20r / min; at the same time, the mixed prepolymer is in the first tank Circulate in the pipeline between the injection machine head and the temperature in the circulation pipeline is the same as the temperature inside the first tank.

[0033] Add MOCA to the second tank and perform melting treatment at a temperature of 60°C. After the MOCA in the second tank is completely melted, start the cycle from the second tank to the pouring head, and the second tank and The piping between the depos...

Embodiment 2

[0036] Place the mold in an oven to preheat to 150°C, place 5000g of polyurethane prepolymer in a vacuum oven and preheat to 50°C under vacuum, then add 220g of porous cerium oxide filler to the polyurethane prepolymer, and heat it at 120r Stir and mix at a speed of 1 / min to obtain a mixed prepolymer.

[0037] Transfer the above mixed prepolymer to the first tank, and carry out heat preservation, stirring, and circulation treatment. The temperature inside the first tank is 150°C, and the stirring speed is 120r / min; at the same time, the mixed prepolymer is in the first tank Circulate in the pipeline between the injection machine head and the temperature in the circulation pipeline is the same as the temperature inside the first tank.

[0038] Add DMTDA into the second tank and carry out melting treatment at a temperature of 150°C. After the DMTDA in the second tank is completely melted, start the cycle from the second tank to the pouring head, and the second tank and The pipi...

Embodiment 3

[0041] Place the mold in an oven to preheat to 200°C, place 5000g of polyurethane prepolymer in a vacuum oven and preheat to 50°C under vacuum, then add 300g of porous cerium oxide filler to the polyurethane prepolymer, and heat it at 300r Stir and mix at a speed of 1 / min to obtain a mixed prepolymer.

[0042] Transfer the above mixed prepolymer to the first tank, and carry out heat preservation, stirring, and circulation treatment. The temperature inside the first tank is 200°C, and the stirring speed is 150r / min; at the same time, the mixed prepolymer is in the first tank Circulate in the pipeline between the injection machine head and the temperature in the circulation pipeline is the same as the temperature inside the first tank.

[0043] Add the cross-linking agent into the second tank and carry out melting treatment at a temperature of 200°C. After the cross-linking agent in the second tank is completely melted, start the cycle from the second tank to the pouring head, a...

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Abstract

The invention relates to the field of CMP polishing pad machining and manufacturing, in particular to a CMP polishing layer based on porous cerium oxide and a preparation method thereof. The CMP polishing layer based on the porous cerium oxide is obtained by mixing and curing raw materials of a polyurethane prepolymer, a cross-linking agent and the porous cerium oxide; and the preparation method comprises the steps of preheating the polyurethane prepolymer in a vacuum state first, and then adding a porous cerium oxide packing to the polyurethane prepolymer, and sufficiently stirring and mixingthe porous cerium oxide packing and the polyurethane prepolymer to obtain a mixed prepolymer; transferring the mixed prepolymer into a first tank body and carrying out heat preservation, stirring andcycling treatment on the mixed prepolymer; adding the cross-linking agent to a second tank body to be melted; correcting injection weight ratio of the first tank body and the second tank body and then mixing materials in the first tank body and the second tank body at a high speed; injecting the mixed materials into a mold; curing the mold; and vulcanizing materials in the mold to obtain the polishing layer. The CMP polishing layer based on the porous cerium oxide has the advantages of higher polishing efficiency, more stable wear resistance, more stable flowing property and more stable cutting property.

Description

technical field [0001] The invention relates to the field of processing and manufacturing of CMP polishing pads, in particular to a CMP polishing layer based on porous cerium oxide and a preparation method thereof. Background technique [0002] Chemical mechanical polishing (CMP) is a micro-nano processing technology that combines mechanical grinding and chemical oxidation to remove the surface material of the processed workpiece. This technology can make the surface of the processed workpiece ultra-flat and ultra-smooth, mainly Used in IC and MEMS manufacturing fields. During CMP, the rotating wafer is pressed on the rotating polishing pad, and the polishing liquid containing abrasive grains and chemicals flows between the wafer and the polishing pad. The pad is continuously removed under mechanical action. The more uniform the trajectory distribution and the relative friction length of the abrasive grains on the silicon wafer surface, the smaller the non-uniformity of su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24B24D11/00
CPCB24B37/245B24D11/001C09K3/1409B24B37/24B24B37/22C09K3/14
Inventor 但文涛
Owner HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD
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