Preparation method of anti-oxidizing coating
A technology of anti-oxidation coating and silicon carbide layer, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problem of crack-prone hydrogen chloride inhibition, multi-layer SiC coating gap increase, deposition Conditions are not easy to control and other problems, to achieve the effect of overcoming poor high temperature oxidation resistance, avoiding cracks and partial shedding, and improving high temperature oxidation resistance
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[0028] The present invention provides a method for preparing an anti-oxidation coating. The method includes the following steps:
[0029] (1) Place the base material in a deposition reaction chamber (such as a deposition furnace), for example, cut the base material into samples of different specifications and shapes (for example, a flat sample with a length of 100mm, a width of 100mm and a height of 5mm). A ring sample with an outer diameter of 60mm, an inner diameter of 30mm and a height of 10mm), and then support the sample in a deposition furnace (CVD furnace);
[0030] (2) Adjust the temperature in the deposition reaction chamber to 1000~1200℃ (for example, 1000℃, 1020℃, 1050℃, 1080℃, 1100℃, 1120℃, 1150℃, 1180℃ or 1200℃), and make The deposition reaction chamber is insulated under the condition of a vacuum degree of 1 to 3 kPa (for example, 1, 1.5, 2, 2.5 or 3 kPa);
[0031] (3) Pass the silicon carbide source gas into the deposition reaction chamber (for example, by bubbling), ...
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[0060] Example 1
[0061] A flat sample of C / SiC composite material with a length of 100mm, a width of 100mm and a height of 10mm (100*100*10mm) was loaded into the deposition furnace (CVD furnace); the temperature of the deposition furnace was increased to 1020℃, Insulation at a negative pressure of 3kPa; under the stable conditions of a temperature in the deposition furnace of 1020°C (deposition temperature) and a negative pressure of 3kPa (deposition pressure), the SiC source gas is introduced to deposit the SiC layer three times, and the deposition time for each layer After 4 hours, the SiC / SiC / SiC anti-oxidation coating is finally obtained; wherein, the silicon carbide source gas includes trichloromethylsilane, argon and hydrogen; the flow rate of the argon is 0.6m 3 / h, the flow rate of the hydrogen is 0.1m 3 / h, the molar ratio of the hydrogen to the trichloromethylsilane is 11:1.
[0062] The performance test of the sample with the anti-oxidation coating prepared in this em...
Example Embodiment
[0063] Example 2
[0064] Load a flat sample of C / SiC composite material with a length of 100mm, a width of 100mm and a height of 5mm (100*100*5mm) into the CVD furnace; the temperature of the deposition furnace is increased to 1050°C, and the pressure is 2kPa Heat preservation in the state; under the stable conditions of the temperature in the deposition furnace of 1050℃ and the negative pressure of 2kPa, the SiC source gas is introduced, and the SiC layer is deposited three times. The deposition time of each layer is 4 hours, and finally SiC / SiC / SiC resistance is obtained. Oxidation coating; wherein the silicon carbide source gas includes trichloromethylsilane, argon and hydrogen; the flow rate of the argon is 0.8m 3 / h, the flow rate of the hydrogen is 0.15m 3 / h, the molar ratio of the hydrogen to the trichloromethylsilane is 13:1.
[0065] The performance test of the sample with the anti-oxidation coating prepared in this embodiment is carried out: the sample with the anti-oxi...
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