Check patentability & draft patents in minutes with Patsnap Eureka AI!

Multilayer interconnection substrate for high frequency and manufacturing method thereof

A technology of multi-layer interconnection and substrate, applied in the direction of multi-layer circuit manufacturing, high-frequency matching device, printed circuit manufacturing, etc., can solve the problems of easy increase in size difference, difficulty in filling plating layer, position shift, etc., and achieve low quality Variation, excellent positional accuracy, small taper effect

Active Publication Date: 2018-12-21
SNAPTRACK
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of processing by laser etc., since the via holes are formed based on the alignment marks formed on the glass-ceramic multilayer interconnection substrate, positional displacement may occur at the time of position detection of this alignment and laser processing bit
[0023] In addition, in the case of processing by laser, the size difference between the upper part and the lower part of the via-hole conductor tends to increase, and this tapered conductor is undesirable in terms of high-frequency characteristics
In addition, where the formed resin layer is thick, it is difficult to fill the plating and voids tend to occur in the plated conductor; this is again undesirable in high frequency use, especially when forming and connecting components such as antennas
[0024] Also, in many cases, these techniques target wiring so that the quality of via-hole conductors in the high frequency band is not considered

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer interconnection substrate for high frequency and manufacturing method thereof
  • Multilayer interconnection substrate for high frequency and manufacturing method thereof
  • Multilayer interconnection substrate for high frequency and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0075] The high-frequency multilayer interconnection substrate of the present embodiment is a substrate suitable for use as a component of a high-frequency module. A high-frequency multilayer interconnection substrate 10 illustrated in FIG. 1 has an intermediate substrate 1 and surface insulating layers 3a, 3b made of organic materials stacked in contact with both surfaces of the intermediate substrate 1 .

[0076] The interlayer insulating substrate 1 has a plurality of stacked and integrated interlayer insulating layers 2a to 2d composed of glass ceramics, and is configured by low temperature firing (LTCC) of glass ceramics that can be fired at a low temperature of, for example, 1000°C or less. substrate. The inner conductor layer 5 is formed in a predetermined electrode pattern between each of the intermediate insulating layers 2a to 2d or on the outer side surfaces of the intermediate insulating layers 2a to 2d. In order to electrically connect each internal conductor lay...

no. 2 example

[0150] The high-frequency multilayer interconnection substrate is not limited to the embodiments described above, and those of various structures are illustrated. For example, it may be a high-frequency multilayer interconnection substrate 10a, such as Figure 1B described in. This high frequency multilayer interconnection substrate 10a is similar to Figure 1A The high frequency multilayer interconnection substrate 10 described in . Except as explained below, there are similar actions and effects; descriptions of common parts are omitted.

[0151] That is, in this high-frequency multilayer interconnection substrate 10a, terminals of capacitor 7c1 or IC element 7c2 arranged on the outside of outer via-hole conductor 4a in surface insulating layer 3a are connected to outer via-hole conductor 4a. Furthermore, the antenna element 7d disposed on the outer side of the outer via-hole conductor 4b formed in the surface insulating layer 3b is connected to the outer via-hole conduct...

example 1

[0170] A plurality of green sheets for intermediate substrates formed as above were stacked, sheets for forming conductors were stacked on both sides of the stacked green sheets for substrates, and stacking was further performed, so the green sheets with a thickness of 150 μm were stacked. Shrinkage-inhibited green sheets are stacked on both sides. At this time, if Figure 9 As illustrated in (A) of , when positioned to match the position, the conductive paste 16α ​​for the intermediate via hole in the green sheet 12α for the glass-ceramic multilayer interconnection substrate and the conductive paste for the The conductive paste 14α that forms the outer through-holes in the sheet 20α of conductors. Note that, in the examples, descriptions of components other than the conductive paste for forming via-hole conductors are omitted.

[0171] Then, the laminate obtained in this way is placed in a normal mold in which the upper and lower punches are flat, at 700kg / cm 2 Pressurized...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Average particle sizeaaaaaaaaaa
Heightaaaaaaaaaa
Granularityaaaaaaaaaa
Login to View More

Abstract

The objective of the invention is to realize high reliability and high functionalization while suppressing characteristics variation in a multilayer interconnection substrate used in a microwave or millimeter-wave band integrated with an antenna. A multilayer substrate for high frequency with an antenna element formed on a surface. The multilayer substrate for high frequency has an intermediate substrate. The intermediate substrate consists of a low-temperature co-fired glass-ceramic substrate and has intermediate insulating layers consisting of a glass-ceramic and an internal conductor formedbetween these intermediate insulating layers. A surface insulating layer consisting of an organic material having a dielectric constant lower than a glass-ceramic material is stacked on a surface ofthe intermediate substrate. An outer-side via conductor penetrating this surface insulating layer is configured by a sintered metal that forms a metallic bond with a wiring conductor in the substrate.The outer-side via conductor is formed at the same time as sintering the glass-ceramic multilayer substrate.

Description

[0001] Related Application Cross-References and Priority Claims [0002] This application claims the benefit and priority of Japanese Patent Application No. JP 2016-72802 filed on March 31, 2016, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a high-frequency multilayer interconnection substrate and a manufacturing method thereof, and more particularly to a high-frequency multilayer interconnection substrate suitable for systems using high frequencies such as microwaves or millimeter waves. Background technique [0004] In recent years, communication systems using microwaves and millimeter waves are being actively developed, and high-frequency devices used for these instruments are also being developed. Microwaves and millimeter waves are known to have characteristics such as broadband, high resolution, and short wavelength. Since these characteristics realize large-capacity communication, high-speed dat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01B3/12H01B3/40H01L23/66H01Q21/06H05K1/03H05K1/09H05K3/46H01B7/42
CPCH01B3/12H01L23/66H01L23/15H01L23/49822H01L23/49827H01Q21/0087H01Q21/0093H01Q21/065H05K1/0306H05K3/4629H05K3/4697H05K2201/10098H05K2203/1131H01L2223/6677H01L2924/15192H01L2224/16227H01L21/4807H01L21/4857H01L21/486H01Q1/2283H01Q1/38H01Q9/0414H05K1/024H05K1/115H05K3/0029H05K3/429H05K3/4667H05K2201/0209H05K2201/10015H05K2203/107
Inventor 小更恒外间尚记二俣阳介仁宫惠美石本笃史
Owner SNAPTRACK
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com