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Semiconductor device

A semiconductor, conductive technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc.

Active Publication Date: 2018-12-21
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the electric field on the cathode side is relaxed, and the oscillation of the voltage / current waveform at the time of reverse recovery is suppressed

Method used

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  • Semiconductor device
  • Semiconductor device
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0162] The structure of the semiconductor device according to Embodiment 1 will be described by taking a diode as an example. figure 1 is a cross-sectional view showing the structure of the semiconductor device according to the first embodiment. figure 1 The semiconductor device of Embodiment 1 shown is in n - The inside of the drift layer (first semiconductor layer) 1 is a diode including an n-type field stop layer (a plurality of n-type FS layers (first semiconductor regions) 7 ) having a plurality of peaks of impurity concentration in the depth direction. The depth direction is from n - The back side (second main surface) 10a of the type semiconductor substrate (semiconductor chip) 10 faces the direction of the front side (first main surface) 10b.

[0163] Specifically, a p-type anode layer (second semiconductor layer) 2 is provided on the surface layer of the front surface 10 b of the semiconductor substrate 10 . The p-type anode layer 2 is a diffusion region formed b...

Embodiment approach 2

[0199] Next, the structure of the semiconductor device according to Embodiment 2 will be described. Figure 10 is a cross-sectional view showing the configuration of a main part of the semiconductor device according to the second embodiment. exist Figure 10 2 shows the structure of the back surface 10a of the semiconductor substrate 10, and the illustration of the structure of the front surface 10b is omitted. In addition, as for the n-type FS layer 7, only the n-type FS layers 7a, 7b are shown (refer to figure 1 , figure 2 ) peak P of impurity concentration 1 ,P 2 . The difference between the semiconductor device of the second embodiment and the semiconductor device of the first embodiment is that, in the n constituting the cathode layer 6 + Type cathode region 4 and p-type cathode region 41, make the thickness X of p-type cathode region 41 11 than n + Thickness X of type cathode region 4 13 Thin.

[0200] The portion 52 of the n-type FS layer 7a opposite to the ...

Embodiment approach 3

[0206] Next, the structure of the semiconductor device of the third embodiment will be described. Figure 12 It is a cross-sectional view showing the structure of the main part of the semiconductor device according to the third embodiment. The semiconductor device according to the third embodiment differs from the semiconductor device according to the first embodiment in that an IGBT (Insulated Gate Bipolar Transistor: Insulated Gate Bipolar Transistor) and a diode are formed on the same semiconductor substrate 10 .

[0207] That is, the semiconductor device of Embodiment 3 is an RC-IGBT (Reverse Conducting-IGBT: Reverse Conducting IGBT) to which the FS structure of Embodiment 1 is applied. Specifically, after becoming n - On the same semiconductor substrate 10 as the drift layer 1 , an IGBT portion 61 in which an IGBT is disposed and an FWD portion 62 in which a FWD (Free Wheeling Diode: Free Wheeling Diode) is disposed are provided. The FWD of the FWD portion 62 is the sem...

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Abstract

On a surface layer at a rear surface (10a) of a semiconductor substrate (10), n+-type cathode areas (4) and p-type cathode areas (5) are selectively provided. The n+-type cathode areas (4) and the p-type cathode areas (5) form a cathode layer (6), and are adjacent to each other in a direction parallel to the rear surface (10a) of the semiconductor substrate (10). The n+-type cathode areas (4) andthe p-type cathode areas (5) are in contact with a cathode electrode (8). In an n--type drift layer (1), a plurality of n-type FS layers (7) are provided deeper than the cathode layer (6) from the rear surface (10a) of the semiconductor substrate (10) and at mutually different depths. According to this configuration, in a diode, a trade-off relation between reduction of forward direction voltage and reduction of reverse recovery loss can be improved and soft recovery can be achieved.

Description

technical field [0001] The present invention relates to semiconductor devices. Background technique [0002] Conventionally, as diodes used in automobiles such as 4WD (Four-Wheel Drive: four-wheel drive), known Figure 17 diode of the structure shown. Figure 17 It is a cross-sectional view showing the structure of a conventional diode. Such as Figure 17 As shown, in the diode of the conventional structure, n + type region (hereinafter referred to as n + type cathode region) 104 and a p-type region (hereinafter referred to as p-type cathode region) 105 constitute a cathode layer 106 . [0003] In addition, the existing structure of diodes in n - An n-type buffer layer 107 is provided between the n-type drift layer 101 and the cathode layer 106 . The n-type buffer layer 107 is formed by ion implantation with an acceleration energy of about 620 keV from the back surface 110 a of the semiconductor substrate 110 using phosphorus (P) as a dopant to form a 1.7×10 12 / cm 3 i...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L21/329H01L21/336H01L29/739H01L29/78H01L29/868
CPCH01L29/861H01L27/0727H01L21/263H01L29/32H01L29/36H01L29/66136H01L29/8613H01L29/0603H01L29/1602H01L29/1608H01L29/2003H01L29/24H01L21/26506H01L29/7397H01L29/66348H01L29/1095H01L29/0834H01L27/0716H01L29/41708H01L29/8611H01L29/0804H01L29/739H01L29/868
Inventor 田村正树阿部和藤井岳志
Owner FUJI ELECTRIC CO LTD
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