Combined type quartz crucible for monocrystalline silicon growth and preparation method thereof

A quartz crucible and combined technology, which is applied in the field of combined quartz crucible for single crystal silicon growth and its preparation, can solve the problems of loss of energy consumption, high material cost, waste of time, etc., to increase production capacity, save electricity and labor costs Effect

Pending Publication Date: 2018-12-28
常州市永达五金工具厂
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During crystal growth, the high temperature of about 1500°C in the furnace needs to be reduced and stabilized at about 1420°C. When the furnace is shut down, the high temperature of about 1420°C in the furnace needs to be lowered to below 100°C. The whole process loses a lot of energy and wastes A lot of time seriously affects the production capacity of the single crystal furnace
[0005] Chinese patent document

Method used

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  • Combined type quartz crucible for monocrystalline silicon growth and preparation method thereof
  • Combined type quartz crucible for monocrystalline silicon growth and preparation method thereof
  • Combined type quartz crucible for monocrystalline silicon growth and preparation method thereof

Examples

Experimental program
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Effect test

Example Embodiment

[0055] (Example 1, combined quartz crucible and preparation method thereof)

[0056] See Figure 1 to Figure 3 , the combined quartz crucible for single crystal silicon growth in this embodiment includes a crucible outer body 1 and a crucible inner cylinder body 2 .

[0057] See Figure 9 to Figure 12, the crucible outer body 1 and the crucible inner cylinder 2 are all one piece, wherein the crucible outer body 1 is a quartz sintered integral piece with an upward opening. The outer crucible body 1 of the crucible includes an outer cylinder part 11 and a crucible bottom 12 connected to each other. A bearing part 13 is provided on the inner wall below the top edge of the crucible bottom 12. The part of the inner wall of the crucible bottom 12 above the bearing part 13 is is the upper part of the inner side wall of the crucible bottom 12, and the part of the inner side wall of the crucible bottom 12 below the bearing part 13 is the lower part of the inner side wall of the cruci...

Example

[0083] (manufacturing example)

[0084] When preparing monocrystalline silicon from the combined quartz crucible obtained in Example 1, first place the combined quartz crucible in the single crystal furnace, and manually drop 150 to 180 kilograms of solid silicon (purity 99.9999%) raw materials. Then, according to the conventional vacuuming method of the single crystal furnace, vacuumize the furnace of the single crystal furnace and fill it with nitrogen. Then heat the single crystal furnace and control the temperature of the feed and material area of ​​the combined quartz crucible to be 1500°C. Then, the automatic feeding device feeds continuously to the chemical material area according to the set speed. When the liquid level of the melt in the crystal growth area reaches the set height, the temperature in the crystal growth area is controlled to 1420°C, and the pre-installed seed crystal is inserted into the melt. body surface, rotate the seed crystal at the same time, and...

Example

[0086] (Example 2)

[0087] See Figure 13 to Figure 15 , the rest of this embodiment is the same as embodiment 1, the difference is:

[0088] The supporting part 13 of the crucible outer body 1 has an annular joint part 13-1 and a side wall 13-2 located below the annular joint part 13-1 and vertically connected to the inner edge of the annular joint part 13-1.

[0089] The shape of the annular joint portion 13-1 of the carrying portion 13 of the crucible outer body 1 is a circular plane arranged horizontally, and its outer edge is in contact with the inner side wall of the top of the crucible bottom 12, and the side wall 13 of the carrying portion 13 -2 is cylindrical, and the lower edge of the side wall 13-2 is in contact with the lower part of the inner side wall of the bottom 12 of the crucible.

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Abstract

The invention relates to a combined type quartz crucible for the monocrystalline silicon growth and a preparation method thereof. The combined type quartz crucible comprises an outer crucible body ofthe crucible and an inner cylinder body of the crucible, wherein the outer crucible body of the crucible comprises an outer cylinder part and a crucible bottom, and the inner cylinder body of the crucible is composed of a carbon fiber sintering cylinder and a quartz sintering material arranged around the carbon fiber sintering cylinder. The quartz sintering material is an integrated piece formed by sintering quartz powder covering the carbon fiber sintering cylinder. The carbon fiber sintering cylinder is tubular fabric vertically penetrating therethrough and formed by weaving and sintering acarbon fiber. When the quartz crucible is in use, the inner cylinder body of the crucible is arranged in the outer crucible body of the crucible, and the outer crucible body of the crucible is dividedinto inner and outer areas of a crystal growing area and feeding and melting area. The combined type quartz crucible for the monocrystalline silicon growth and the preparation method thereof have theadvantages that the structure is simple, impurities can be separated, it can be achieved that feeding, material melting, crystal growing and impurity separation are carried out simultaneously, and the continuous working time is long under the high-temperature environment.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon manufacture, in particular to a combined quartz crucible for growing monocrystalline silicon and a preparation method thereof. Background technique [0002] Monocrystalline silicon is mainly used for photovoltaic power generation. Photovoltaic power generation is currently the cleanest energy in renewable energy. Using sunlight to convert light energy into electrical energy is currently a clean energy recognized and vigorously developed in the world. The industry has a bright future. , but since the liquid level and temperature are required to be stable during the growth of monocrystalline silicon, the process conditions are harsh, the energy consumption is high, and the cost is high, which hinders the vigorous promotion and popularization of photovoltaic power generation to a certain extent. While improving the growth conditions of crystalline silicon, reducing energy consumption ...

Claims

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Application Information

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IPC IPC(8): C30B15/10C30B29/06
CPCC30B15/002C30B15/10C30B29/06
Inventor 袁佳斌
Owner 常州市永达五金工具厂
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