Combined type quartz crucible for monocrystalline silicon growth and preparation method thereof

Abstract

The invention relates to a combined type quartz crucible for the monocrystalline silicon growth and a preparation method thereof. The combined type quartz crucible comprises an outer crucible body ofthe crucible and an inner cylinder body of the crucible, wherein the outer crucible body of the crucible comprises an outer cylinder part and a crucible bottom, and the inner cylinder body of the crucible is composed of a carbon fiber sintering cylinder and a quartz sintering material arranged around the carbon fiber sintering cylinder. The quartz sintering material is an integrated piece formed by sintering quartz powder covering the carbon fiber sintering cylinder. The carbon fiber sintering cylinder is tubular fabric vertically penetrating therethrough and formed by weaving and sintering acarbon fiber. When the quartz crucible is in use, the inner cylinder body of the crucible is arranged in the outer crucible body of the crucible, and the outer crucible body of the crucible is dividedinto inner and outer areas of a crystal growing area and feeding and melting area. The combined type quartz crucible for the monocrystalline silicon growth and the preparation method thereof have theadvantages that the structure is simple, impurities can be separated, it can be achieved that feeding, material melting, crystal growing and impurity separation are carried out simultaneously, and the continuous working time is long under the high-temperature environment.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon manufacture, in particular to a combined quartz crucible for growing monocrystalline silicon and a preparation method thereof. Background technique [0002] Monocrystalline silicon is mainly used for photovoltaic power generation. Photovoltaic power generation is currently the cleanest energy in renewable energy. Using sunlight to convert light energy into electrical energy is currently a clean energy recognized and vigorously developed in the world. The industry has a bright future. , but since the liquid level and temperature are required to be stable during the growth of monocrystalline silicon, the process conditions are harsh, the energy consumption is high, and the cost is high, which hinders the vigorous promotion and popularization of photovoltaic power generation to a certain extent. While improving the growth conditions of crystalline silicon, reducing energy consumption ...

AI Technical Summary

Problems solved by technology

During crystal growth, the high temperature of about 1500°C in the furnace needs to be reduced and stabilized at about 1420°C. When the furnace is shut down, the high temperature of about 1420°C in the furnace needs to be lowered to below 100°C. The whole process loses a lot of energy and wastes A lot of time seriously affects the production capacity of the single crystal furnace

[0005] Chinese patent document CN202246997U (application number 201120350790.8) discloses a double-layer crucible, which belongs to the above-mentioned second type of double-layer crucible, although it realizes feeding, chemical material, crystal pulling at the same time and continuous crystal pulling, avoiding crystal growth The temperature in the furnace is lowered at a certain time, but the material cost of the crucible is relatively high

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