High-reliability BZT lead-free epitaxial single-crystal energy storage thin film and preparation method thereof

A reliable, single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of rare research and rare reports, and achieve smooth film surface, uniform grain size, and degree of epitaxy. excellent effect

Inactive Publication Date: 2019-01-01
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Studies have pointed out that materials with high dielectric constant and piezoelectric coefficient usually have good ferroelectric energy storage properties, but BaZr x Ti 1-x o 3 (BZT) system dielectric materials are rarely studied in thin film energy storage materials, and there are few reports about their ferroelectric energy storage characteristics.

Method used

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  • High-reliability BZT lead-free epitaxial single-crystal energy storage thin film and preparation method thereof
  • High-reliability BZT lead-free epitaxial single-crystal energy storage thin film and preparation method thereof
  • High-reliability BZT lead-free epitaxial single-crystal energy storage thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0052] (1) Preparation of BaZr 0.2 Ti 0.8 o 3 Ceramic target: according to BaZr 0.2 Ti 0.8 o 3 The stoichiometric ratio weighs 4-5N level BaCO 3 High purity powder, ZrO 2 High purity powder and TiO 2 High-purity powder, after the three are mixed, the mixture is sequentially subjected to ball milling, pre-sintering, secondary ball milling, granulation, molding and sintering processes to obtain flaky BaZr 0.2 Ti 0.8 o 3 Ceramic target. The process parameters of ball milling and secondary ball milling are the same, specifically: the mass ratio of ball stone, mixture and alcohol is 2:1:1, the ball milling speed is 400r / min, and the ball milling time is 6h; the pre-sintering temperature is 900℃, pre-sintering The sintering time is 4h; a tablet press is used for molding, the pressure during the molding process is 40Mpa, and the holding time is 5min; the sintering temperature in the sintering process is 1050°C, and the sintering time is 4h.

[0053] (2) Clean substrate: Co...

Embodiment 2

[0059] (1) Preparation of BaZr 0.2 Ti 0.8 o 3 Ceramic target: according to BaZr 0.2 Ti 0.8 o 3 The stoichiometric ratio weighs 4-5N level BaCO 3 High purity powder, ZrO 2 High purity powder and TiO 2 High-purity powder, after the three are mixed, the mixture is sequentially subjected to ball milling, pre-sintering, secondary ball milling, granulation, molding and sintering processes to obtain flaky BaZr 0.2 Ti 0.8 o 3 Ceramic target. The process parameters of ball milling and secondary ball milling are the same, specifically: the mass ratio of ball stone, mixture and alcohol is 2:1:1, the ball milling speed is 400r / min, and the ball milling time is 6h; the pre-sintering temperature is 900℃, pre-sintering The sintering time is 4h; a tablet press is used for molding, the pressure during the molding process is 40Mpa, and the holding time is 5min; the sintering temperature in the sintering process is 1050°C, and the sintering time is 4h.

[0060] (2) Clean substrate: Co...

Embodiment 3

[0066] (1) Preparation of BaZr 0.2 Ti 0.8 o 3 Ceramic target: according to BaZr 0.2 Ti 0.8 o 3 The stoichiometric ratio weighs 4-5N level BaCO 3 High purity powder, ZrO 2 High purity powder and TiO 2 High-purity powder, after the three are mixed, the mixture is sequentially subjected to ball milling, pre-sintering, secondary ball milling, granulation, molding and sintering processes to obtain flaky BaZr 0.2 Ti 0.8 o 3 Ceramic target. The process parameters of ball milling and secondary ball milling are the same, specifically: the mass ratio of ball stone, mixture and alcohol is 2:1:1, the ball milling speed is 400r / min, and the ball milling time is 6h; the pre-sintering temperature is 900℃, pre-sintering The sintering time is 4h; a tablet press is used for molding, the pressure during the molding process is 40Mpa, and the holding time is 5min; the sintering temperature in the sintering process is 1050°C, and the sintering time is 4h.

[0067] (2) Clean substrate: Co...

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Abstract

The invention discloses a high-reliability BZT lead-free epitaxial single-crystal energy storage thin film and a preparation method thereof. According to the preparation method, a target material is bombarded through plasmas by utilizing an ultrahigh vacuum radio frequency magnetron sputtering technology under high-temperature and high-oxygen-pressure environments, so that target material particles are deposited on a substrate; epitaxial growth is realized to obtain a BZT epitaxial thin film. The growth speed of the thin film is relatively slow due to characteristics of the radio frequency magnetron sputtering technology, so that the crystal grain size of the thin film prepared by the method is uniform and the thin film has a flat surface and good crystallization degree; good energy storage properties of a BaZr0.2Ti0.8O3 ceramic target material are combined, so that the energy storage properties of the ceramic target material which is used as a BT-based energy storage material are further enhanced.

Description

technical field [0001] The invention relates to the field of energy storage thin film materials, in particular to a high-reliability BZT lead-free epitaxial single crystal energy storage thin film and a preparation method thereof. Background technique [0002] With the miniaturization, integration and multifunctionalization of various electronic devices, the size requirements for electronic components are becoming increasingly severe. Compared with bulk materials, thin film materials have obvious size advantages. More importantly, with the deepening research and exploration of thin film materials, they have many physical properties that bulk materials do not have. The biggest advantage of thin film materials is its interface effect and size effect, and so far, these effects have greatly improved the performance of thin film materials. One of the important parameters of thin-film energy storage materials is the energy storage density. The strongest energy storage among the t...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35C30B23/02C30B29/22
CPCC23C14/088C23C14/3414C23C14/35C30B23/025C30B29/22
Inventor 马春蕊刘明孙梓雄
Owner XI AN JIAOTONG UNIV
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