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A kind of method for improving the resistivity of bromine lead cesium single crystal

A technology of bromine, lead, cesium, and resistivity, which is applied in the field of high-energy ray detector materials, can solve the problems of resistivity drop, affect crystal quality, and low detection efficiency, and achieve increased resistivity, improved resistivity, and simple and effective preparation process Effect

Active Publication Date: 2020-05-19
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
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Problems solved by technology

[0013] Aiming at the above defects or improvement needs of the prior art, the present invention provides a method for improving the resistivity of a bromine-lead-cesium single crystal, by doping the Pb site of bromine-lead-cesium cesium with monovalent cation Ag ions to compensate the bromine Donor-type intrinsic defects in lead-cesium crystals to increase the resistivity of bromine-lead-cesium single crystals, thereby solving the problem of CsPbBr grown by the melt method 3 There are a large number of intrinsic defects in the crystal, which seriously affect the crystal quality of the crystal, resulting in technical problems such as a decrease in resistivity and low detection efficiency.

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1- Embodiment 4

[0048] Cesium bromide (4.776g) is dissolved in hydrobromic acid solution, and its molar concentration is 1.1mol / L; Lead bromide (8.156g) is dissolved in hydrobromic acid solution, and its molar concentration is 1.9mol / L; Silver bromide (0.01g) is dissolved in hydrobromic acid and is made into 50g solution, takes out a certain amount (0g for embodiment 1, 2.251g for embodiment 2, 3.377g for embodiment 3, and 4.502g for embodiment 4) The hydrobromic acid solution of this silver bromide is used as doping solution, at this moment, the quality of the silver ion that embodiment 1~embodiment 4 is mixed is respectively 0g, 2.586 * 10 -4 g, 3.880×10 -4 g, 5.172×10 -4 g.

[0049] Mix the hydrobromic acid solution of cesium bromide and the hydrobromic acid solution of lead bromide in the form of dropping separately, and a chemical coprecipitation reaction occurs under the condition of 150 revolutions / min. The reaction time is 30 minutes. , performing solid-liquid separation, and then ...

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Abstract

The invention belongs to the field of high-energy ray detector material, and particularly relates to a method for increasing resistivity of CsPbBr3 monocrystal. The method has the advantage that the Pb (plumbum) site of the CsPbBr3 monocrystal is doped with monovalent Ag (silver) anions so as to compensate the donor type intrinsic feature in the CsPbBr3 monocrystal, improve the resistivity of theCsPbBr3 monocrystal, and solve the technical problems of decreasing of resistivity, low detection efficiency and the like due to serious influence to the crystallizing quality of the crystal caused bya large amount of intrinsic features of the CsPbBr3 monocrystal grown by the melt type.

Description

technical field [0001] The invention belongs to the field of high-energy ray detector materials, and more specifically relates to a method for increasing the resistivity of bromine-lead-cesium single crystal. Background technique [0002] Since the successful nuclear test, nuclear safety and nuclear radiation detection have become the focus of international attention. The related high-energy ray detection materials and devices have become the subject of extensive research by scholars from all over the world. High-energy ray detectors have experienced the development from gas detectors, scintillator detectors to semiconductor detectors. Among them, semiconductor detectors have the advantages of high energy resolution and high detection efficiency, so they have a wider range of applications, usually at room temperature The semiconductor single crystal material used for high-energy ray detection has the following characteristics: [0003] (1) Higher average atomic number ensu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B28/04C30B11/02
CPCC30B11/02C30B28/04C30B29/12
Inventor 郑志平陈桦林傅邱云张明智陈成郭鹏举罗为
Owner HUAZHONG UNIV OF SCI & TECH