SiCO separation layer material with low dielectric constant and preparation method thereof, and application of SiCO separation layer materials with low dielectric constant

A technology with low dielectric constant and dielectric constant, applied in the direction of metal material coating process, coating, circuit, etc., can solve the problems of poor tolerance, high dielectric constant, single composition, etc., and achieve good process parameters, Effect of reduced capacitive coupling and low dielectric constant

Active Publication Date: 2019-01-01
合肥安德科铭半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual process, the composition and structure of the SiCO material determine the dielectric constant, tolerance, growth rate and other properties of the SiCO film, and the growth process of the SiCO film has a decisive impact on the composit

Method used

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  • SiCO separation layer material with low dielectric constant and preparation method thereof, and application of SiCO separation layer materials with low dielectric constant

Examples

Experimental program
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Effect test

Embodiment 1

[0039] A low dielectric constant SiCO spacer film, based on CO / CO 2 The mixed gas is used as the oxidant, prepared by plasma-enhanced atomic layer deposition method, the film contains -Si-CH 3 structure. The dielectric constant of the film is 4, the C content is 5%, and the density is 2.3g / cm 3 , with 90% coverage.

[0040] A kind of preparation method of the SiCO spacer thin film of low dielectric constant, comprises the following steps:

[0041] 1) In the PEALD reaction chamber, heat a silicon wafer with a thickness of 525 μm and a diameter of 100 mm to 300 ° C;

[0042] 2) Using helium (He, introduction speed 100 sccm) as the carrier gas, diisopropylamine silane (DIPAS) was introduced into the reaction chamber as the first reactant at the introduction speed of 0.2 mg / min, and the introduction time was 0.1 second, and the reaction The air pressure in the chamber is maintained at 150Pa;

[0043] 3) Pump out the excess DIPAS, and purge with He gas for 10 sec at a purge ra...

Embodiment 2

[0048] A low dielectric constant SiCO spacer film, based on CO / CO 2 The mixed gas is used as the oxidant, prepared by plasma-enhanced atomic layer deposition method, the film contains -Si-CH 3 structure. The dielectric constant of the film is 4.05, the C content is 11%, and the density is 2.15g / cm 3 , with a coverage rate of 98%.

[0049] A kind of preparation method of the SiCO spacer thin film of low dielectric constant, comprises the following steps:

[0050] 1) In the PEALD reaction chamber, heat a silicon wafer with a thickness of 775 μm and a diameter of 300 mm to 400 ° C;

[0051] 2) Using helium (He, introduction speed 200sccm) as the carrier gas, diisopropylamine silane (DIPAS) was introduced into the reaction chamber as the first reactant at the introduction speed of 0.2 mg / min, and the introduction time was 0.5 seconds, and the reaction The air pressure in the chamber is maintained at 100Pa;

[0052] 3) Pump out the excess DIPAS and purge with He gas for 0.1 se...

Embodiment 3

[0057] A low dielectric constant SiCO spacer film, based on CO / CO 2 The mixed gas is used as the oxidant, prepared by plasma-enhanced atomic layer deposition method, the film contains -Si-CH 3 structure. The dielectric constant of the film is 3.90, the C content is 24%, and the density is 2.0g / cm 3 , with 95% coverage.

[0058] A kind of preparation method of the SiCO spacer thin film of low dielectric constant, comprises the following steps:

[0059] 1) In the PEALD reaction chamber, heat a silicon wafer with a thickness of 725 μm and a diameter of 200 mm to 350 ° C;

[0060] 2) Using helium (He, introduction speed 200sccm) as the carrier gas, diisopropylamine silane (DIPAS) was introduced into the reaction chamber as the first reactant at the introduction speed of 0.2 mg / min, and the introduction time was 0.5 seconds, and the reaction The air pressure in the chamber is maintained at 200Pa;

[0061] 3) Pump out the excess DIPAS and purge with He gas for 5 sec at a purge ...

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Abstract

The present invention provides SiCO separation layer material with a low dielectric constant. A -Si-CH3 or -Si-CH2CH3 tail-end structure is employed to control carbon content to ensure the low dielectric constant and a proper film density, enhance the endurance capacity for the hydrofluoric acid or gaseous fluorine corrosion and reduce the etching rate, the dielectric constant of the SiCO separation layer material is not larger than 4.10, and SiCO separation layer material have good processing process parameters, and is more suitable for taking as preparation materials of a new generation integration circuit element. The present invention further provides a preparation method and application of the SiCO separation layer materials with a low dielectric constant.

Description

【Technical field】 [0001] The invention relates to the field of semiconductors, in particular to a low dielectric constant SiCO spacer material and its preparation method and application. 【Background technique】 [0002] With the introduction of a new generation of integrated circuits in the semiconductor industry, on the one hand, the density of components is required to be greatly increased, and on the other hand, its size and the spacing between components are required to be reduced as much as possible. The development of new photolithography technology promises to reduce the size of the device, but when the distance between two adjacent conductor elements is reduced, it will cause the capacitance value (ie, the dielectric constant k of the insulating material separating the above conductor elements) to increase. The increase of the capacitance will increase the capacitive coupling between the conductors, increase the power consumption, and increase the resistive-capacitive...

Claims

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Application Information

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IPC IPC(8): H01L21/31H01L21/3105H01L21/768C23C16/30C23C16/505
CPCH01L21/31H01L21/3105H01L21/768C23C16/30C23C16/505
Inventor 不公告发明人
Owner 合肥安德科铭半导体科技有限公司
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