A kind of cleaning method of solar polycrystalline black silicon chip
A solar energy and silicon wafer technology, applied in the direction of final product manufacturing, circuit, climate sustainability, etc., can solve the problems of inability to remove the suede of black silicon wafers, and the improvement of the conversion efficiency of black silicon wafers is not obvious. The effect of cleanliness, mild processing temperature and high conversion efficiency
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Embodiment 1
[0026] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:
[0027] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 30 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.
[0028] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a concentration of 1 wt% potassium hydroxide solution for 40s, and the temperature of the potassium hydroxide solution is 20°C. Add 30mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.
[0029] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with dei...
Embodiment 2
[0033] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:
[0034] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 50 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.
[0035] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a potassium hydroxide solution of 2 wt % for 50 seconds, and the temperature of the potassium hydroxide solution is 25° C. Add 40mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.
[0036] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with deionize...
Embodiment 3
[0040] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:
[0041] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 50 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.
[0042] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a concentration of 4wt% potassium hydroxide solution for 50s, and the temperature of the potassium hydroxide solution is 30°C. Add 50mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.
[0043] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with deio...
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