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A kind of cleaning method of solar polycrystalline black silicon chip

A solar energy and silicon wafer technology, applied in the direction of final product manufacturing, circuit, climate sustainability, etc., can solve the problems of inability to remove the suede of black silicon wafers, and the improvement of the conversion efficiency of black silicon wafers is not obvious. The effect of cleanliness, mild processing temperature and high conversion efficiency

Active Publication Date: 2020-09-01
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this cleaning method can remove the metal impurities on the surface of the black silicon wafer, it cannot remove the damage to the suede surface of the black silicon wafer after being placed or transported, and the conversion efficiency of the cleaned black silicon wafer is not significantly improved.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:

[0027] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 30 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.

[0028] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a concentration of 1 wt% potassium hydroxide solution for 40s, and the temperature of the potassium hydroxide solution is 20°C. Add 30mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.

[0029] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with dei...

Embodiment 2

[0033] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:

[0034] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 50 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.

[0035] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a potassium hydroxide solution of 2 wt % for 50 seconds, and the temperature of the potassium hydroxide solution is 25° C. Add 40mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.

[0036] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with deionize...

Embodiment 3

[0040] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:

[0041] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 50 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.

[0042] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a concentration of 4wt% potassium hydroxide solution for 50s, and the temperature of the potassium hydroxide solution is 30°C. Add 50mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.

[0043] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with deio...

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PUM

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Abstract

The invention relates to the field of solar polycrystalline black silicon wafers, and discloses a cleaning method of a solar polycrystalline black silicon wafer. The cleaning method comprises primarywater washing, alkali washing, primary rinsing, mixed acid washing and secondary rinsing, and is suitable for cleaning black silicon wafers whose surfaces are oxidized or contaminated by a wet methodafter being stored or transported for a long time. This cleaning method can ensure that the reflectance of black silicon wafer changes less than 2% before and after cleaning, and can obtain higher short-circuit current. Cleaned silicon wafer surface cleanliness is improved, which is conducive to the subsequent diffusion, coating and other processes. At the same time, the alkaline washing step of the cleaning method can modify the surface of black silicon wafer, thereby obtaining higher open circuit voltage and filling factor, and obtaining a battery piece with higher conversion efficiency.

Description

technical field [0001] The invention relates to the field of solar polycrystalline black silicon wafers, in particular to a cleaning method for solar polycrystalline black silicon wafers. Background technique [0002] Polycrystalline black silicon wafers have relatively low reflectivity and will be the mainstream of polycrystalline solar cells in the future. However, expensive dry process equipment and wet processes with environmental protection pressure make some enterprises have to hold back from the preparation technology of black silicon. Because the efficiency of traditional additive diamond wire is low, replacing the original silicon wafer with textured black silicon wafer is an effective way to improve the conversion efficiency of polycrystalline cells. [0003] At present, the preparation methods of black silicon mainly include reactive ion etching method and metal-assisted chemical solution etching method. No matter which kind of black silicon wafers are purchased b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02052H01L31/1804Y02E10/547Y02P70/50
Inventor 赵颖厉文斌郑正明
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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