Etching station aluminum anode oxidation component regeneration preparation technology

Abstract

The invention discloses an etching station aluminum anode oxidation component regeneration preparation technology. The etching station aluminum anode oxidation component regeneration preparation technology comprises the following steps: step one, carrying out ungrease treatment on an aluminum component; step two, putting the aluminum component into an alkaline liquor for alkali corrosion; step three, putting the aluminum component into an acid liquor for ash removal; step four, washing; step five, carrying out anode oxidation on the aluminum component; step six, cleaning and drying; step seven, using a tri-cathode plasma spray gun to spray a sizing agent onto an anode oxidation layer of the aluminum component, uniformly controlling the thickness of a sprayed coating to be 60 to 150 microns; step eight, drying and cleaning; and step nine, drying, cooling and packaging. Compared with the prior art, sand blasting pretreatment does not need to be carried out on the component, the anode oxidation layer also does not need sealing treatment, the operation procedure is reduced, the cost is reduced, the productivity is improved, simultaneously, the loss and deformation caused by a sand blasting technology for the component are avoided, and the number of times of repeated regeneration for the component is increased.

Description

technical field [0001] The present invention relates to etching processes. Background technique [0002] The etching process is one of the key processes in the process of semiconductor and liquid crystal panel preparation. The etching machine components are in an active plasma atmosphere when they are working, such as halogen plasma etching gases SF6, CF4, Cl2, etc., which are physically impacted by ions for a long time and chemical etching of active atoms. There are many aluminum parts inside the etching machine, and the cleanliness inside the etching machine is strictly required during the preparation of semiconductors and liquid crystal panels, which requires improving the corrosion resistance of the aluminum parts inside the etching chamber. [0003] The existing technology is to prepare an anodized layer on the surface of aluminum parts, and then use traditional plasma spraying to prepare yttrium oxide coating on the anodized layer. Yttrium oxide has excellent corrosio...

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Problems solved by technology

[0004] In the process of using the above method to prepare components, since the plasma spraying uses powder with a particle size of 10-90 μm, the adsorption capacity of spraying on the anodized film is poor, and it needs to be sprayed on the anodized film. Before anodizing, sandblasting is performed on the working surface of the component to improve the adhesion of the coating. Sandblasting increases the loss of the component and causes deformation of the component. With the increase in the number of regenerations of the component, the thickness of the component is seriously reduced and the flatness becomes larger due to deformation. , unable to meet the requirements of use, had to be replaced with new parts, increasing maintenance costs

In addition, the surface roughness of the yttrium oxide coating prepared by plasma spraying is Ra4-8μm, and the porosity of the coating is 3-8%. With the development of the semiconductor and liquid crystal panel industries, the plasma etching atmosphere in the high-process etching chamber is even harsher. , the etching power is getting higher and higher, and the corrosion resistance of ordinary plasma sprayed yttrium oxide coatings is increasingly unable to meet the requirements

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