Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Disulfide single crystal and preparation method and application thereof

A disulfide, single crystal technology, applied in the fields of electronics and optoelectronics, can solve problems such as the unrealized preparation of disulfide single crystals

Inactive Publication Date: 2019-01-11
NORTHWESTERN POLYTECHNICAL UNIV
View PDF13 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using the method, a tungsten diselenide film with a controllable layer number of more than 50 μm can be grown at 600-800 degrees Celsius in a hydrogen-free environment, but the size of the obtained tungsten diselenide single crystal is only 50 μm, and Preparation of disulfide single crystals with unrealized ultra-large domain size

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Disulfide single crystal and preparation method and application thereof
  • Disulfide single crystal and preparation method and application thereof
  • Disulfide single crystal and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Preparation of disulfide single crystals:

[0069] (1) In the tube furnace with a heating device in the middle, along the direction of the air flow, 50 mg of Se elemental substance with a particle size of 200 mesh is placed at a distance of 30% of the total length of the tube furnace from the inlet end of the tube furnace. The quartz crucible of powder is placed at the place where the distance from the inlet end of the tube furnace accounts for 50% of the total length of the tube furnace, and the particle size containing sodium chloride is 100 mesh WO 3 Powder (among them, sodium chloride 1mg, WO 3 9mg) of the cubic ceramic crucible, the surface will contain a layer of 300nm thick amorphous S i o 2 A silicon substrate is covered above the cubic ceramic crucible, and a gap accounting for 15% of the cubic crucible mouth area is reserved for airflow to enter;

[0070] (2) Into the tube furnace, the flow rate is 5sccm of hydrogen and 20sccm of argon, the tube furnace is...

Embodiment 2

[0074] The difference from Example 1 is that the temperature of the tube furnace was raised to 1150°C.

Embodiment 3

[0076] The difference from Example 1 is that the tube furnace is heated to 800°C

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a disulfide single crystal and a preparation method and application thereof. The preparation method comprises: (1) placing a sulfur group elementary substance source and a transition metal oxide source doped with sodium chloride at positions in a tubular furnace with a heater at the middle, wherein the distances between the positions and a gas inlet of the tubular furnaceare respectively 25-35% and 45-55% the total length of the tubular furnace and placing a growth matrix above the transition metal oxide source, and (2) feeding protective gas into the tubular furnace,heating the tubular furnace to a chemical vapor deposition temperature and carrying out chemical vapor deposition. The preparation method can produce disulfide single crystals with high crystallization quality and an oversized domain size. The disulfide single crystal can be used for any one or at least two of nanodevices, optical devices and on-chip lasers.

Description

technical field [0001] The invention relates to the technical fields of electronics and optoelectronics, in particular to a disulfide single crystal and its preparation method and application. Background technique [0002] Transition metal dichalcogenides (TMDs) have a similar structure to graphene, but have their own unique photoelectric properties. Due to the existence of their band gaps, they also have better mobility values ​​and on-off ratios. They are used in photoelectric devices and P-N junctions. It has outstanding performance in semiconductors, so it has been favored by many researchers. In recent years, it has been discovered that two-dimensional transition metal chalcogenides include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, tungsten diselenide, niobium diselenide, etc. The advantages exhibited are particularly obvious, and it has broad application prospects in nanodevices, optical devices, and on-chip lasers. [0003] The performance of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/46C30B25/00
CPCC30B25/00C30B29/46
Inventor 郑建邦朱美洁赵耀华冯晴亮
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com