Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-sensitivity miniature electric field sensing device with cantilever beam structure

An electric field sensor and high-sensitivity technology, which is applied in the fields of electromagnetic field characteristics, instruments, and measurement of electrical variables, can solve the problems that photoelectric sensors cannot be miniaturized, affect the measurement accuracy of photoelectric sensors, and are unfavorable for application and development. It is easy to miniaturize processing , Great innovation and practicability, great effect of deformation

Active Publication Date: 2020-08-28
TSINGHUA UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the electric field sensor of photoelectric effect is in the stage of promotion and test operation. So far, the problem of temperature stability is still difficult to solve, which has become the biggest challenge affecting the measurement accuracy of photoelectric sensors. In addition, photoelectric sensors cannot be miniaturized due to the demand for high-quality light sources. High cost, not conducive to wide application and development

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-sensitivity miniature electric field sensing device with cantilever beam structure
  • High-sensitivity miniature electric field sensing device with cantilever beam structure
  • High-sensitivity miniature electric field sensing device with cantilever beam structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In piezoelectric materials, when the polarization direction of the dielectric is subjected to the action of an electric field, the dielectric will be deformed accordingly. According to this principle, the piezoelectric film 2 used in the device of the invention has been pre-polarized in the thickness direction, and at the same time has various in-plane Anisotropy. When the piezoelectric film is subjected to an electric field in the vertical direction, the stretching deformation of the piezoelectric film in the horizontal direction is transmitted to the adjacent semiconductor film through mechanical coupling. Since the film is a cantilever beam structure with one end fixed and one end free, the semiconductor Bending occurs in the film, taking a cantilever beam as an example, such as image 3 shown.

[0040] The piezoelectric film that meets the requirements of the device of the present invention needs to have a significant piezoelectric effect, so ferroelectric relaxors s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-sensitivity micro electric field sensor device with a cantilever beam structure. The high-sensitivity micro electric field sensor device comprises a base, wherein a semiconductor film is installed on the base through a fixed part; an ion doping resistance area is embedded in the semiconductor film in a doped manner; and a piezoelectric film is deposited on the top surface of the semiconductor film. The high-sensitivity micro electric field sensor device has the beneficial effects that the electric field sensor has the application targets of high sensitivity, widedynamic range and wide frequency range. An ion doping area of the semiconductor film is large in response amplitude, and the device is high in sensitivity. Stable operation characteristic quantitiesof an electric power system are collected, failures and the characteristics of various overvoltages can be monitored, and accurate big data are provided for the researches such as power grid fault diagnosis and insulation coordination. The sensor is easy for micromation, high in integration level degree and low in cost, and is applicable for volume production, so that the sensor is applicable forintensive arrangement of large power grid circuits and electrical equipment so as to comprehensively collect electrical information and reflect the characteristics of the electric power system.

Description

technical field [0001] The invention relates to the field of novel electric field sensors in advanced manufacturing and automation, in particular to a highly sensitive miniature electric field sensor device with a cantilever beam structure. Background technique [0002] Smart grid has become a major research topic for global energy development and transformation. In order to meet the diverse energy structure, grid form, load type, user demand, etc. of the smart grid, the sensor network that realizes real-time monitoring of each node is of great significance to the reliable, safe, economical, and efficient operation of the grid. Sensor networks require a wide variety of sensors, including gas sensors, humidity sensors, temperature sensors, voltage sensors, current sensors, deformation sensors, and so on. Among them, as the most basic signal of the power grid, the measurement technology of voltage is still relatively backward. The existing voltage transformers are divided in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R29/08
CPCG01R29/0878
Inventor 何金良胡军薛芬刘洋王善祥韩志飞庄池杰曾嵘
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products