Stacked spiral inductor

Abstract

A stacked spiral inductor includes a substrate and a plurality of stac insulating layers and an inductive metal layer for on that substrate by a semiconductor process. The stacking spiral inductor includes a substrate and a plurality of layers of insulating layers and an inductive metal layer formed on the substrate by a semiconductor process. The inductive metal layer includes a conductive coil having a spiral shape and a via region for connecting two adjacent inductive metal layers, The conductive coils of each of the inductive metal layers have a common coil center, and the conductive coilsof the lower inductive metal layer are retracted toward the coil center with respect to the conductive coils of the upper inductive metal layer in two adjacent inductive metal layers. The parasitic capacitance between the layers of the spiral inductor is reduced without changing the conditions of the prior art and with the same substrate area, the self-resonant frequency is increased, and the performance of the spiral inductor is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to stacked spiral inductors. Background technique [0002] The traditional stacked spiral inductor is prepared by preparing a planar spiral inductor on each metal layer, and then connecting the spiral inductors of two adjacent layers through metal vias, such as figure 1 As shown, it becomes a stacked spiral inductor with three metal layers connected to each other. Wherein, the shapes and sizes of the planar spiral inductors in the first metal layer m1 , the second metal layer m2 , and the third metal layer m3 are all the same. In traditional stacked spiral inductors, the parasitic capacitance of the planar spiral inductor between the metal layers is large, and the parasitic coupling capacitance between the metal layer and the silicon substrate will also become large, which seriously affects the performance of the stacked spiral inductor. Contents of the invention [0003]...

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Problems solved by technology

[0003] Based on this, it is necessary to address the problems of large parasitic capacitance and low performance between metal layers, and provide a method that can improve the performance of spiral inductors on the same substrate area without changing the existing process technology. Stacked Spiral Inductor

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