Led substrate
A technology of LED substrates and metal substrates, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high price and poor thermal conductivity of ceramic substrates, achieve excellent thermal conductivity, simple and effective control, and broad application prospects
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Embodiment 1
[0030] A kind of LED substrate provided by the present invention is adopted, the metal substrate is an aluminum substrate with a thickness of 1mm, and the area is 400mm×300mm, and the coating of the insulating and heat-conducting layer adopts the spraying method, and the total thickness is 50 μm, wherein the high heat-conducting filler is SiC, The high-pressure resistant filler is white carbon black, the particle size of SiC and white carbon black is 1-10 μm, and the bonding phase is nano-Al 2 o 3 The specific composition of the sol and the slurry is as follows; the conductive layer is manufactured by electroless copper plating-electroplating copper method, and the thickness of the copper layer is 35.4 μm.
[0031] Its production process is as follows:
[0032] A. Coarsening and cleaning treatment of aluminum substrate;
[0033] B. Apply insulating and thermally conductive paste to the surface of the roughened and cleaned aluminum substrate to form a coating with the above t...
Embodiment 2
[0047] Adopt a kind of LED substrate that the present invention provides scheme, metal substrate is the aluminum substrate of thickness 2mm, and area is φ 100mm, and the coating of its insulating and heat-conducting layer adopts screen printing method, and total thickness is 70 μm, and wherein high heat-conducting filler is Al 2 o 3 , SiC, high pressure resistant filler is sericite, Al 2 o 3 The particle size of SiC and sericite is 5-10μm, and the bonding phase is nano-SiO 2 The specific composition of the sol and the slurry is as follows; the conductive layer is manufactured by a vapor phase deposition-electroplating copper method, and the thickness of the copper layer is 20.2 μm.
[0048] The manufacturing process of this embodiment is similar to that of Embodiment 1.
[0049] The composition of the insulating and thermally conductive paste is shown in the table below:
[0050]
additive
High thermal conductivity filler
High pressure packi...
Embodiment 3
[0060] Adopt a kind of LED substrate of the scheme provided by the present invention, the metal substrate is the aluminum substrate of thickness 2mm, and area is φ 280mm, and the coating of its insulating heat conduction layer adopts spraying method, and total thickness is 70 μm, wherein high heat conduction filler is SiC, diamond powder , the high pressure resistant filler is sericite, SiC 、 The particle size of diamond powder and sericite is 1-10μm, and the bonding phase is nano TiO 2 The specific composition of the sol and the slurry is as follows; the conductive layer is manufactured by electroless plating-electroplating method, and the thickness of the copper-tin alloy layer is 70 μm.
[0061] The manufacturing process of this embodiment is similar to that of Embodiment 1.
[0062] The composition of the insulating and thermally conductive paste is shown in the table below:
[0063]
additive
High thermal conductivity filler
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Abstract
Description
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