Organic electroluminescence device and display device
A technology for electroluminescent devices and organic light-emitting layers, applied in organic light-emitting devices, organic light-emitting device parameters, organic semiconductor devices, etc., can solve the problems of poor color purity, short device life, large efficiency roll-off, etc., and reduce efficiency. Roll-off, balanced transmission, the effect of promoting energy transfer
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[0089] The present invention also provides a preparation method of the organic electroluminescent device, to figure 1 As an example, it includes sequentially depositing an anode 2 , a hole transport region 3 , an organic light-emitting layer 4 , an electron transport region 5 , and a cathode 6 on a substrate 1 , and then packaging. Wherein, when preparing the organic light emitting layer 4, the organic light emitting layer 4 is formed by co-evaporating the electron donor type material source, the electron acceptor type material source and the resonance type TADF material source.
[0090] Specifically, the preparation method of the organic electroluminescent device of the present invention comprises the following steps:
[0091] 1. Ultrasonically treat the glass plate coated with the anode material in a commercial cleaning agent, rinse in deionized water, ultrasonically degrease in acetone: ethanol mixed solvent, bake in a clean environment until the water is completely removed...
Embodiment 1
[0100] The device structure of this embodiment is as follows:
[0101] ITO / HI-2(10nm) / HT-27(40nm) / (D-1:A-6=1:9):20wt%M-20(30nm) / ET-53(30nm) / LiF(0.5nm ) / Al(150nm)
[0102] Wherein, the anode is ITO; the material of the hole injection layer is HI-2, and the general total thickness is 5-30nm, which is 10nm in this embodiment; the material of the hole transport layer is HT-27, and the total thickness is generally 5-50nm, This embodiment is 40nm; the host material of the organic light-emitting layer is an exciplex, wherein the mass ratio of D-1 and A-6 is 1:9, the dye is a resonance type TADF material M-20 and the doping concentration is 20wt% , the thickness of the organic light-emitting layer is generally 1-60nm, and the present embodiment is 30nm; the material of the electron transport layer is ET-53, and the thickness is generally 5-30nm, and the present embodiment is 30nm; the electron injection layer and the cathode material are selected from LiF ( 0.5nm) and metallic alumi...
Embodiment 2
[0105] The device structure of this embodiment is as follows:
[0106] ITO / HI-2(10nm) / HT-27(40nm) / (D-1:A-6=4:6):20wt%M-20(30nm) / ET-53(30nm) / LiF(0.5nm ) / Al(150nm)
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