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Method for preparing graphene on dielectric substrate

A technology of dielectric materials and dielectric substrates, applied in the field of functional thin film materials, can solve problems such as unfavorable graphene nucleation and growth, low concentration of active carbon atoms, restrictions on the performance of graphene-based devices and industrial application processes, etc. Achieve the effect of protecting the integrity and crystal quality and reducing the workload

Inactive Publication Date: 2019-02-22
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the process of growing graphene on a dielectric material substrate by CVD method, due to the dielectric substrate material, such as Si, SiO 2 and Al 2 o 3 etc. lack the high-temperature catalytic properties of hydrocarbons, which makes the concentration of active carbon atoms pyrolyzed on the substrate surface low, which is not conducive to the nucleation and growth of graphene, resulting in the direct preparation on the surface of the dielectric substrate. nanocrystalline graphene
Such a small graphene domain size will seriously damage the large-scale preparation and performance uniformity of graphene devices, and restrict the performance and industrial application of graphene-based devices.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0036] A method for preparing graphene on a dielectric material substrate (at 300nm-SiO 2 / Si substrate to prepare graphene)

[0037] 1) A chemical vapor deposition system CVD is used to prepare a single-layer graphene film on a 25 μm thick copper foil purchased from Alfa to obtain a graphene / copper substrate sample;

[0038] 2) Cut the graphene / copper substrate (graphene / metal substrate) into 8×8mm 2 small pieces of

[0039] 3) Ultrasonic cleaning of 300nm-SiO in acetone, deionized water and alcohol in sequence 2 / Si dielectric material substrate, and with N 2 blow dry, spare;

[0040] 4) Transfer the graphene on the small piece in step 2) to the cleaned 300nm-SiO2 in step 3) as a seed crystal by wet chemical method 2 / Si dielectric material substrate, get graphene seed crystal / 300nm-SiO 2 / Si substrate samples, such as figure 2 shown;

[0041] 5) The graphene seed crystal / 300nm-SiO obtained in step 4) 2 / Si substrate sample is put into chemical vapor deposition (CV...

Embodiment 2

[0049] A method for preparing graphene from a dielectric material substrate (preparing graphene on a sapphire substrate)

[0050] 1) A chemical vapor deposition system CVD is used to prepare a single-layer graphene film on a 25 μm thick copper foil purchased from Alfa to obtain a graphene / copper substrate sample;

[0051] 2) Cut the graphene / copper substrate (graphene / metal substrate) into 8×8mm 2 and 4×4mm 2 Two sizes of flakes; in order to prepare double-layer seed crystals, two sizes of flakes, one large and one small, are required;

[0052] 3) Ultrasonic cleaning Al in acetone, deionized water and alcohol in sequence 2 o 3 substrate, and with N 2 blow dry, spare;

[0053] 4) First, place the 8×8mm in step 2) 2 The graphene on the graphene / copper substrate sample was transferred to the step 3) by wet chemical method as the seed crystal to clean the Al 2 o 3 On the substrate, the bottom graphene seed crystal / Al 2 o 3 Substrate sample; Then use the same method to pl...

Embodiment 3

[0061] A method for preparing graphene on a dielectric material substrate (at 300nm-SiO 2 / Si substrate to prepare graphene)

[0062] 1) A chemical vapor deposition system CVD is used to prepare a single-layer graphene film on a 25 μm thick copper oxide foil purchased from Alfa to obtain a graphene / copper substrate sample;

[0063] 2) Cut the graphene / copper substrate (graphene / metal substrate) into 2×2mm 2 small pieces of

[0064] 3) Ultrasonic cleaning of 300nm-SiO in acetone, deionized water and alcohol in sequence 2 / Si dielectric material substrate, and with N 2 blow dry, spare;

[0065] 4) Transfer the graphene on the small piece in step 2) to the cleaned 300nm-SiO2 in step 3) as a seed crystal by wet chemical method 2 / Si dielectric material substrate, get graphene seed crystal / 300nm-SiO 2 / Si substrate samples, see figure 2 ;

[0066] 5) The graphene seed crystal / 300nm-SiO obtained in step 4) 2 / Si substrate sample is put into chemical vapor deposition (CVD) ...

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Abstract

The invention provides a method for preparing graphene on a dielectric substrate. The method includes the steps: that (1) a graphene film is prepared on a metal substrate; (2) the metal substrate andthe graphene film on the metal substrate are divided into small pieces; (3) the dielectric substrate is cleaned; (4) graphene on the small pieces obtained in the step (2) is transferred to the dielectric substrate as seed crystals, and a graphene seed crystal / dielectric substrate is obtained; (5) the graphene seed crystal / dielectric substrate is placed into a chemical vapor deposition system; (6)a vacuum pump is turned on for vacuumizing; (7) inert gas is introduced, and a growth cavity is heated to 1000-1300 DEG C; (8) hydrogen and hydrocarbon are introduced to promote the graphene seed crystals to grow up; (9) after graphene grows, a heating power supply is turned off, a hydrogen and hydrocarbon flowmeter is turned off, and the graphene / dielectric substrate is cooled to room temperature. Graphene samples can be directly obtained on a dielectric material, a process of transfer after metal substrate growth is omitted, the workload is low, graphene wholeness and crystal quality are protected, and economic benefits are high.

Description

technical field [0001] The invention belongs to the technical field of functional thin film materials, in particular to a method for preparing graphene on a dielectric material substrate. Background technique [0002] Graphene is made of sp 2 A two-dimensional crystalline material composed of hybrid carbon atoms with a hexagonal honeycomb structure and a thickness of only 0.34nm. The special crystal structure endows graphene with a series of excellent physical and chemical properties, such as ultra-high carrier mobility, high thermal conductivity, excellent electrical conductivity and light transmission, as well as high mechanical strength and high chemical stability, etc. It has broad application prospects in many fields such as transparent electrodes (TCEs), supercapacitors, field-effect transistors, photodetection, lithium-ion batteries, and biosensors. [0003] At present, the preparation of graphene on metal substrates by chemical vapor deposition (CVD) is the most im...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 史永贵桑昭君王允威杨淑赵高扬
Owner XIAN UNIV OF TECH