Preparation method of mutually staggered crescent bismuth vanadate composite material

A composite material, bismuth vanadate technology, applied in chemical instruments and methods, catalyst activation/preparation, metal/metal oxide/metal hydroxide catalysts, etc., to achieve the effects of simple operation, low cost, and large surface area

Inactive Publication Date: 2019-03-01
UNIV OF JINAN
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the current existing problems, the present invention provides a simple and effective synthesis method of interlaced crescent-shaped bismuth vanadate composite materials on indium tin oxide conductive glass, which is simple to operate and has a large specific surface area.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of mutually staggered crescent bismuth vanadate composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Cleaning of indium tin oxide (ITO) conductive glass: Put the indium tin oxide conductive glass into acetone, absolute ethanol, and secondary water for 10 minutes for ultrasonic treatment, and then put it in a 40 ℃ oven for 30 minutes to dry;

[0021] (2) Preparation of precursor solution: Weigh 0.3638 g of bismuth nitrate and 6.6404 g of potassium iodide and dissolve in 100 mL of nitric acid solution with pH=1.2, stir for 5 min to fully dissolve and mix, add 45 mL of 0.3 M p-benzoquinone Ethanol solution, stirred for 30 min;

[0022] (3) Electrodeposition of bismuth iodide oxide: place the indium tin oxide conductive glass treated in (1) in the precursor solution prepared in (2), and use the point-site dissolution analysis method of the electrochemical workstation to first adjust The parameter is -0.3 V, 5 s for pretreatment, then adjust the parameter to -0.1 V, 15 min for electrochemical deposition, take it out, wash it with secondary water three times, and dry it ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
transmittivityaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of mutually staggered crescent nickel: iron hydroxide / bismuth vanadate composite material deposited on tin indium oxide (ITO) conducting glass, and belongsto the field of material preparation. The method includes the steps: substrate cleaning; precursor solution preparation; bismuth oxyiodide electro-deposition; bismuth vanadate generation; nickel: iron hydroxide / bismuth vanadate composite material synthesis. The preparation method has the advantages that a large-area crescent composite material structure is formed, technological process is simple,the tin indium oxide conducting glass with high light transmittance and good conductivity is selected as a substrate, environmental pollution is avoided, the operation process is simple, the cost islow, and reaction conditions are easily implemented. The nickel: iron hydroxide / bismuth vanadate composite material can be formed only by a two-step method, visible light absorption can be enhanced, photoelectric conversion efficiency can be improved, and the composite material has a wide application prospect in the fields of photocatalysis, solar batteries and the like.

Description

technical field [0001] The invention relates to the technical field of nanomaterial synthesis, and more specifically relates to a method for preparing an interlaced crescent-shaped bismuth vanadate composite material. Background technique [0002] Bismuth vanadate has a suitable bandgap (2.4-2.6 eV), and has the advantages of moderate bandgap width, easy synthesis, low cost, environmental compatibility, and light corrosion resistance. However, the photocatalytic application of bismuth vanadate also has some defects, such as photogenerated Electron-hole pairs are easy to recombine, and the mobility of photogenerated carriers is slow. These defects reduce the photoelectric transfer efficiency of bismuth vanadate, thus limiting its wide application. To address these defects, bismuth vanadate and nickel:iron oxyhydroxide are combined to form a heterostructure, which can not only promote the separation of charges but also improve the absorption efficiency of visible light, and ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/847B01J37/34B01J37/02
CPCB01J23/002B01J23/8472B01J35/0033B01J35/004B01J37/0201B01J37/348
Inventor 于京华孙建丽孔庆坤葛慎光李丽
Owner UNIV OF JINAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap