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Laser crystallization measuring apparatus and method

A measurement equipment and technology of crystallinity, which can be used in color/spectral property measurement, measurement device, transmittance measurement, etc., and can solve problems such as changes in laser crystallinity

Inactive Publication Date: 2019-03-05
SAMSUNG DISPLAY CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In this case, however, the measurement of laser crystallization will vary depending on the tester's level of vision or the tester's proficiency level

Method used

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  • Laser crystallization measuring apparatus and method
  • Laser crystallization measuring apparatus and method
  • Laser crystallization measuring apparatus and method

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Embodiment Construction

[0027] Hereinafter, exemplary embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various suitable ways, all without departing from the spirit or scope of the present disclosure.

[0028] The drawings and descriptions are to be regarded as illustrative in nature and not restrictive. Throughout the specification, like reference numerals denote like elements.

[0029] In addition, the size and thickness of each configuration shown in the drawings are arbitrarily shown for better understanding and ease of description, but the present disclosure is not limited thereto.

[0030] Hereinafter, a laser crystallinity measurement apparatus according to an exemplary embodiment will be described in detail with reference to the accompanying drawings.

[0031] Figure 1A A laser crystallinity measurement device according to an exemplary em...

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Abstract

A laser crystallization measuring apparatus including a spectrometer configured to measure actual data of a spectrum of an actual polycrystalline silicon layer crystallized by a laser crystallizationdevice, and a simulation device that is connected to the spectrometer and is configured to determine simulation data of a spectrum of a virtual polycrystalline silicon layer according to a shape of avirtual protrusion formed in the virtual polycrystalline silicon layer, wherein a shape of an actual protrusion formed in the actual polycrystalline silicon layer is determined by using final data determined by selecting simulation data that is approximate to the actual data.

Description

technical field [0001] Aspects of the present disclosure relate to a laser crystallization degree measuring device and a method of using the laser crystallization degree measuring device. Background technique [0002] Generally, methods for crystallizing an amorphous silicon layer into a polysilicon layer include solid phase crystallization (SPC), metal induced crystallization (MIC), metal induced lateral crystallization (MILC), excimer laser annealing (ELA), and the like. In particular, ELA is generally used to crystallize amorphous silicon into polycrystalline silicon by using a laser beam in a process for manufacturing an organic light emitting diode display (OLED) or a liquid crystal display (LCD). [0003] When forming a polysilicon layer by ELA, it is important to form large and uniform crystal grains in the polysilicon layer. [0004] Laser crystallization can be measured by destroying the polysilicon layer or by analyzing the grains with a tester who directly inspec...

Claims

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Application Information

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IPC IPC(8): G01N21/21G01N21/25
CPCG01N21/211G01N21/25G01N2021/213H01L22/12G01N21/47G01N21/59H01L21/02675H01L21/67253
Inventor 朴龙俊韩承镐金暻隋徐瑨吴世允林东燮梁成勋崔峻荣
Owner SAMSUNG DISPLAY CO LTD