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hcg mirror layer, vertical cavity surface emitting laser and preparation method thereof

A technology of vertical cavity surface emission and reflectors, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problems of complex VCSEL epitaxial structure, reduce production costs, and difficulty in achieving scale, and achieve good polarization retention and reduce The effect of production cost and reflection bandwidth width

Active Publication Date: 2020-05-15
武汉云岭光电股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a kind of HCG mirror layer, vertical cavity surface emitting laser and the preparation method of both, by using the prepared HCG mirror layer to replace the two DBR reflection layers in the prior art, because the HCG reflection The mirror layer contains a high-contrast air-suspended grating structure. On the one hand, it can solve the defects that the VCSEL epitaxial structure is complex and difficult to achieve scale, which greatly reduces the production cost. On the other hand, the HCG mirror layer has a wider reflection bandwidth and The advantages of better polarization retention, and the purpose of adjusting the polarization characteristics of the output light can be achieved by adjusting the parameters of the preparation when preparing the HCG mirror layer; thus making the prepared VCSEL laser have the characteristics of extremely high reflectivity and simple structure

Method used

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  • hcg mirror layer, vertical cavity surface emitting laser and preparation method thereof
  • hcg mirror layer, vertical cavity surface emitting laser and preparation method thereof
  • hcg mirror layer, vertical cavity surface emitting laser and preparation method thereof

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Embodiment 1

[0040] see image 3 , the embodiment of the present invention provides an HCG reflector layer, comprising an indium gallium arsenide layer 32 grown sequentially, a first multi-quantum well active layer 31 and an indium phosphide layer 30, and the HCG reflector layer also includes an indium phosphide layer formed on the The air suspension grating structure on the indium phosphide layer 30 and the first multiple quantum well active layer 31, the air suspension grating structure includes the active A groove recessed in the direction of layer 31 and a sub-wavelength grating 94 suspended in said groove. In this embodiment, the air suspension grating structure is obtained by processing the indium phosphide layer 30 and the first multi-quantum well active layer 31. The processing method is usually etching, and the indium phosphide layer 30 and the first multi-quantum well After the active layer 31, a groove will be formed, and it is preferable to etch the InGaAs layer 32 during etch...

Embodiment 2

[0043] see Figure 2-3 , an embodiment of the present invention provides a vertical cavity surface emitting laser, including a ceramic spacer 1 and the above-mentioned HCG mirror layer, and the two HCG mirror layers are respectively a first HCG mirror layer 3 and a second HCG mirror layer layer 6; n-type electrode layer 2, first HCG mirror layer 3, second multi-quantum well active layer 4, confinement layer 5, second HCG mirror layer 6 and p type electrode layer 7, the indium phosphide layer 30 of the first HCG mirror layer 3 is close to the n-type electrode layer 2, and the indium phosphide layer 30 of the second HCG mirror layer 6 is close to the The p-type electrode layer 7 is described above. In this embodiment, after removing the ceramic spacer 1, the n-type electrode layer 2 and the first HCG mirror layer 3 are symmetrical to the second HCG mirror layer 6 and the p-type electrode layer 7, and the symmetry line is the second Multiple quantum well active layer 4 and conf...

Embodiment 3

[0047] This embodiment can prepare the HCG reflector layer in the above-mentioned embodiment one, and this embodiment is interrelated with embodiment one, please refer to image 3 , an embodiment of the present invention provides a method for preparing an HCG mirror layer, S1, sequentially growing an indium gallium arsenic layer 32, a first multi-quantum well active layer 31, and an indium phosphide layer 30; S2, sequentially processing the indium gallium arsenic layer Arsenic layer 32, the first multi-quantum well active layer 31 and the indium phosphide layer 30 to obtain an air-suspended grating structure, and in the obtained air-suspended grating structure, the air-suspended grating structure comprises A groove that is depressed from the indium phosphide layer 30 to the first multi-quantum well active layer 31 and a sub-wavelength grating 94 suspended in the groove. In this embodiment, the air suspension grating structure is obtained by processing the indium phosphide laye...

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Abstract

The present invention relates to the field of semiconductor lasers, provides an HCG mirror layer, a vertical cavity surface emitting laser, an HCG mirror layer preparation method, and a vertical cavity surface emitting laser preparation method. According to the HCG mirror layer, the vertical cavity surface emitting laser, and the preparation methods thereof provided by the present invention, a prepared HCG mirror layer is used to replace two DBR reflective layers in the prior art; since the HCG mirror layer contains an air suspension grating structure with high contrast, on one hand, the defects that the VCSEL epitaxial structure is complicated and difficult to achieve scale development can be solved, and the cost is greatly reduced, and on the other hand, the HCG mirror layer has advantages of a wider reflection bandwidth and better polarization retention, and parameters of the output light can be adjusted by adjusting the prepared parameters when preparing the HCG mirror layer; and the prepared VCSEL laser has the characteristics of extremely high reflectivity and a simple structure.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to an HCG mirror layer, a vertical cavity surface emitting laser and a preparation method for the two. Background technique [0002] Existing emitting lasers are generally classified into FP type equilateral emitting lasers, DFB type equilateral emitting lasers and vertical cavity surface emitting lasers. [0003] Among them, the reflective cavity of the FP type or DFB type equilateral emitting laser is located on both sides of the laser chip, and the high reflectivity of the reflective cavity can be realized by evaporating a dielectric film, so as to reduce the threshold current of the laser and increase the optical power. The vertical cavity surface emitting laser is referred to as VCSEL laser for short. It usually grows n-type electrode b, n-type DBR reflective layer c, multi-quantum well active layer d, confinement layer e, and p-DBR reflector in sequence on substrate a. f, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/343
CPCH01S5/18361H01S5/34306
Inventor 韩宇陈志标
Owner 武汉云岭光电股份有限公司
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