hcg mirror layer, vertical cavity surface emitting laser and preparation method thereof

A technology of vertical cavity surface emission and reflectors, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problems of complex VCSEL epitaxial structure, reduce production costs, and difficulty in achieving scale, and achieve good polarization retention and reduce The effect of production cost and reflection bandwidth width
CN109449753BActive Publication Date: 2020-05-15武汉云岭光电股份有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
武汉云岭光电股份有限公司
Publication Date
2020-05-15

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Abstract

The present invention relates to the field of semiconductor lasers, provides an HCG mirror layer, a vertical cavity surface emitting laser, an HCG mirror layer preparation method, and a vertical cavity surface emitting laser preparation method. According to the HCG mirror layer, the vertical cavity surface emitting laser, and the preparation methods thereof provided by the present invention, a prepared HCG mirror layer is used to replace two DBR reflective layers in the prior art; since the HCG mirror layer contains an air suspension grating structure with high contrast, on one hand, the defects that the VCSEL epitaxial structure is complicated and difficult to achieve scale development can be solved, and the cost is greatly reduced, and on the other hand, the HCG mirror layer has advantages of a wider reflection bandwidth and better polarization retention, and parameters of the output light can be adjusted by adjusting the prepared parameters when preparing the HCG mirror layer; and the prepared VCSEL laser has the characteristics of extremely high reflectivity and a simple structure.
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Description

technical field

[0001] The invention relates to the field of semiconductor lasers, in particular to an HCG mirror layer, a vertical cavity surface emitting laser and a preparation method for the two. Background technique

[0002] Existing emitting lasers are generally classified into FP type equilateral emitting lasers, DFB type equilateral emitting lasers and vertical cavity surface emitting lasers.

[0003] Among them, the reflective cavity of the FP type or DFB type equilateral emitting laser is located on both sides of the laser chip, and the high reflectivity of the reflective cavity can be realized by evaporating a dielectric film, so as to reduce the threshold current of the laser and increase the optical power. The vertical cavity surface emitting laser is referred to as VCSEL laser for short. It usually grows n-type electrode b, n-type DBR reflective layer c, multi-quantum well active layer d, confinement layer e, and p-DBR reflector in sequence on substrate a. f, ...

Claims

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