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Carbonitride nano two-dimensional material enhanced structural ceramic and preparation method thereof

A nano-two-dimensional, carbonitride technology, applied in the field of materials, can solve problems such as limitations, and achieve the effect of improving thermal, excellent mechanical properties, and high strength

Inactive Publication Date: 2019-03-19
SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The brittleness of ceramics is its inherent characteristic, and the fracture of brittle ceramics is explosive and catastrophic, which is the fatal weakness that seriously limits its wide application in industry

Method used

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  • Carbonitride nano two-dimensional material enhanced structural ceramic and preparation method thereof
  • Carbonitride nano two-dimensional material enhanced structural ceramic and preparation method thereof
  • Carbonitride nano two-dimensional material enhanced structural ceramic and preparation method thereof

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preparation example Construction

[0026] like figure 1 , the preferred embodiment of the present invention discloses a method for preparing structural ceramics toughened based on carbonitride nano-two-dimensional materials, comprising the following steps:

[0027] S1: Weigh carbonitride nanometer two-dimensional material and structural ceramic powder according to a certain ratio;

[0028] Among them, carbonitride nano two-dimensional materials include but not limited to hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C 3 N 4 ), MXene;

[0029] The chemical formula of MXene is MX y T x , where M is Ti, V, Cr, Zr, Nb, Mo, Hf, Ta and other early transition metals, X is C, N; T is -OH, -O, -H, -F and other M n+1 x n surface terminal functional groups), including but not limited to Ti 3 C 2 T x 、Cr 3 C 2 T x 、Ti 2 CT x 、Ti 2 NT x 、 Ta 4 C 3 T x , (Ti 0.5 ,Nb 0.5 ) 2 CT x 、Ti 2 (C 0.5 ,N0.5 ) T x 、Zr 3 C 5 T x 、Hf 2 C 5 T x 、Mo 2 TiC 2 T x , (Ti 1-z ,V z ) 3 C 2 T ...

Embodiment approach 1

[0040] This embodiment specifically includes the following steps: referring to patent application 201310625253.3, adopting mechanical alloying technology to prepare Si-B-C-N ceramic powder, weighing Ti respectively according to the mass ratio of 1:99 3 C 2 T x and Si-B-C-N ceramic powder; use dry ball milling technology to mix and mill the two material powders for 24 hours, in which the mass of silicon nitride grinding balls is 20 times the total mass of the two material powders; use spark plasma sintering technology at 1800 ° C, nitrogen Under the condition of atmosphere protection, heat preservation and sintering for 5 minutes to obtain Ti 3 C 2 T x / Si-B-C-N bulk ceramics.

[0041] figure 2 is the Ti obtained in Embodiment 1 3 C 2 T x Scanning electron microscope picture of mixed powder with Si-B-C-N, it can be seen that Ti 3 C 2 T x The nano two-dimensional material is well dispersed in the Si-B-C-N ceramic powder, and the uniformly dispersed mixed powder is h...

Embodiment approach 2

[0043] This embodiment specifically includes the following steps: referring to patent application 201310625253.3, adopting mechanical alloying technology to prepare Si-B-C-N ceramic powder, weighing Ti respectively according to the mass ratio of 1:99 2 NT x and Si-B-C-N ceramic powder; use wet ball milling technology to mix and mill the two material powders for 24 hours, wherein the quality of the silicon nitride grinding ball is 20 times the total mass of the two material powders, and the grinding medium is a water / alcohol mixture; mix The ball-milled slurry was dried in a vacuum oven at 60°C for 12 hours; using spark plasma sintering technology at 1900°C under nitrogen atmosphere protection conditions, heat preservation and sintering for 3 minutes to obtain Ti 2 NT x / Si-B-C-N bulk ceramics.

[0044] For the Ti obtained in Embodiment 2 2 NT x / Si-B-C-N bulk ceramics can be known through analysis and testing, the Ti obtained in the second embodiment 2 NT x The fracture...

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Abstract

The invention discloses a carbonitride nano two-dimensional material enhanced structural ceramic and a preparation method thereof. The preparation method comprises the following steps: S1, weighing carbonitride nano two-dimensional material powder and structural ceramic powder in a preset proportion; S2, uniformly mixing the carbonitride nano two-dimensional material powder with the structural ceramic powder; and S3, sintering the power uniformly mixed in the S2 to obtain the carbonitride nano two-dimensional material enhanced structural ceramic. The carbonitride nano two-dimensional materialenhanced structural ceramic and the preparations method thereof are simple and rapid and green and environment-friendly. The research range of a novel structure-function integrated ceramic and ceramic-based composite material is expanded.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a structural ceramic toughened based on carbonitride nanometer two-dimensional material and a preparation method thereof. Background technique [0002] The brittleness of ceramics is its inherent characteristic, and the fracture of brittle ceramics is explosive and catastrophic, which is the fatal weakness that seriously limits its wide application in industry. Therefore, improving ceramic brittleness (or improving fracture toughness) has always been one of the topics that scientific and technological workers pay attention to. [0003] The disclosure of the above background technical content is only used to assist in understanding the concept and technical solution of the present invention, and it does not necessarily belong to the prior art of this patent application. If there is no clear evidence that the above content has been disclosed on the filing date of this patent appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/515C04B35/622C04B35/64
CPCC04B35/515C04B35/622C04B35/64C04B2235/666
Inventor 梁斌杨诚
Owner SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
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