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Electromagnetic wave shielding film and preparation method thereof

A shielding film and electromagnetic wave technology, applied in the field of electronics, can solve the problems affecting the transmittance and conduction performance of the shielding film, and the difficulty of preparing electromagnetic shielding film films, so as to reduce the use of production raw materials, uniform film layer, and simple preparation process Effect

Active Publication Date: 2020-07-28
SHENZHEN KNQ SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a method for preparing an electromagnetic shielding film, aiming to solve the technical problem that it is difficult to prepare an electromagnetic shielding film, and the film layer is too thick to affect the transmittance and conduction performance of the shielding film.

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  • Electromagnetic wave shielding film and preparation method thereof
  • Electromagnetic wave shielding film and preparation method thereof
  • Electromagnetic wave shielding film and preparation method thereof

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preparation example Construction

[0033] Such as figure 1 As shown, the embodiment of the present invention provides a method for preparing an electromagnetic wave shielding film, comprising the following steps:

[0034] S10. Obtain the carrier layer 20, and prepare the protective layer 10 on one surface of the carrier layer 20;

[0035] S20. forming a metal stack 30 by vacuum sputtering on the surface of the carrier layer 20 away from the protective layer 10,

[0036] Wherein, the metal stack 30 includes a first metal protection layer 31 , a metal functional layer 32 and a second metal protection layer 33 sequentially stacked on the surface of the carrier layer away from the protection layer.

[0037] The preparation method of the electromagnetic wave shielding film provided by the embodiment of the present invention is to prepare the protective layer 10 on one side of the carrier layer 20, and then form the metal stack 30 on the other side of the carrier layer 20 by vacuum sputtering. The vacuum sputtering ...

Embodiment 1

[0068] An electromagnetic wave shielding film.

[0069] Using a 5 micron polyethylene naphthalate film as the carrier layer 20;

[0070] A high-precision laminating machine is used to coat a polyethylene terephthalate protective layer 10 with a thickness of 28 microns on the carrier layer 20;

[0071] Then through a high-precision sputtering machine, the vacuum level is 1*10 -3 Pa, under the condition of 50ppm argon gas, sputtering titanium target, silver target and titanium target on the surface of the carrier layer 20 away from the protective layer 10 in sequence, forming the first metal protective layer 31, the metal functional layer 32 and the second metal protective layer in sequence 33. The thickness of the first metal protection layer 31 is 2 nanometers, the thickness of the metal function layer 32 is 5 nanometers, and the thickness of the second metal protection layer 33 is 2 nanometers.

[0072] Obtain an electromagnetic wave shielding film.

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Abstract

The invention belongs to the technical field of electronics and particularly relates to a method for preparing an electromagnetic wave shielding film. The method comprises a step of obtaining a carrier layer and preparing a protective layer on one surface of the carrier layer, and a step of performing vacuum sputtering on a surface of the carrier layer away from the protective layer to form a metal stack which comprises a first metal protection layer, a metal function layer and a second metal protection layer which are sequentially arranged on a surface of the carrier layer away from the protective layer. According to the method for preparing the electromagnetic wave shielding film provided by the embodiment of the invention, the protective layer is formed by at one side of the carrier layer by using a coating method, the metal stack is formed at the other side of the carrier layer by using a vacuum sputtering method, the film thickness can be controlled by controlling a sputtering time and speed according to the vacuum sputtering, a metal stack film is formed, and the use of production raw materials is reduced. The metal stack formed by the vacuum sputtering has the advantages offast film forming speed, uniform film layer and good stability, the film layer is not easily peeled off, and the preparation process is simple.

Description

technical field [0001] The invention belongs to the technical field of electronics, and in particular relates to an electromagnetic wave shielding film and a preparation method thereof. Background technique [0002] With the rapid development of the electronics industry, electronic products are gradually developing toward miniaturization, light weight, portability, and high-density assembly, which greatly promotes the development of electronic components. The integration of semiconductor chips is getting higher and higher. The number of input and output ports (I / O) per unit area of ​​the device is increasing. The improvement of integration puts forward higher requirements for electronic packaging technology, requiring thinner electronic components and better conductivity. In addition, in order to avoid signal interference caused by electromagnetic radiation and threats to human health, electronic products are required to have better electromagnetic shielding performance. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05K9/00C23C14/34C23C14/16C23C14/20
CPCC23C14/165C23C14/205C23C14/34H05K9/0081
Inventor 由龙赵伟业林翠盈顾婧文
Owner SHENZHEN KNQ SCI & TECH CO LTD