Quantum-dot light-emitting diode and preparation method thereof

Abstract

The invention discloses a quantum-dot light-emitting diode and a preparation method thereof. The quantum-dot light-emitting diode comprises an inorganic electron transport layer, an electron buffer layer, a quantum dot light-emitting layer, a quantum dot modification layer and an inorganic hole transport layer. The electron buffer layer is disposed on the upper side of the inorganic electron transport layer; the quantum dot light-emitting layer is arranged at the upper side of the electron buffer layer; the quantum dot modification layer is arranged at the upper side of the quantum dot light-emitting layer; and the inorganic hole transport layer is arranged at the upper side of the modification layer. According to the invention, since the electron buffer layer is arranged between the inorganic electron transport layer and the quantum dot light-emitting layer and the quantum dot modification layer is arranged between eh inorganic hole transport layer and the quantum dot light-emitting layer, the damages on the quantum dot light-emitting layer by the inorganic electron transport layer and the inorganic hole transport layer can be reduced effectively, the luminous quantum yield of thequantum dot light-emitting layer is increased, and the carrier injection efficiency is modulated; the quantum dot light-emitting layer can be protected; the device is protected from being oxidized; the efficiency, service life and stability of the blue QLED are enhanced.

Description

technical field [0001] The invention relates to the technical field of electronic display, in particular to a quantum dot light-emitting diode and a preparation method. Background technique [0002] Quantum dot-based electroluminescent devices (QLEDs) utilize stable inorganic fluorescent quantum dots as the light-emitting active layer, and have superior characteristics such as precisely tunable saturated colors. Research on wide-color gamut light-emitting devices has shown that quantum dot light-emitting materials have more obvious advantages than traditional organic light-emitting diodes (OLEDs) and LCDs. Since the first report of QLED in 1994, research in this area has quickly attracted people's attention. After years of continuous development, the luminous brightness and luminous efficiency of QLED have been greatly improved compared with the early stage, and it has become more and more clear that it is a new generation. Possibility of light-emitting display devices. Ac...

AI Technical Summary

Problems solved by technology

[0003] The fundamental reason for the low efficiency and lifespan of blue QLED devices in the past is that when using conventional organic-inorganic hybrid QLED device structures to construct blue QLEDs, due to the presence of quantum dots between the inorganic hole injection layer and the quantum dot light-emitting layer, compared to the red and green quantum The larger injection barrier of the dots makes the electron injection excessive and the hole injection insufficient, which causes the carrier imbalance injected into the quantum dots in the light-emitting layer, which makes the carrier recombination efficiency low and the quantum dots in the light-emitting layer are charged. Yield, which ultimately affects the efficiency and lifetime of blue QLED devices

Images