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Colloidal quantum dot film patterning method

A technology of colloidal quantum dots and thin film patterning, applied in the field of materials, can solve the problems of complex patterning process of colloidal quantum dot thin films, and achieve the effects of low cost, improved stability and simple operation

Active Publication Date: 2019-04-02
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a colloidal quantum dot film patterning method, which effectively solves the technical problem of complex colloidal quantum dot film patterning process in the prior art

Method used

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  • Colloidal quantum dot film patterning method

Examples

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Embodiment 1

[0034] This example uses CsPbBr 3 Taking perovskite quantum dots as an example, the surface ligands are oleic acid and oleylamine, and there are carbon-carbon double bonds in the middle of the hydrocarbon chains of oleic acid and oleylamine. While patterning it:

[0035] 1.1 The prepared CsPbBr 3 The perovskite quantum dots are spin-coated on the surface of the glass substrate by a glue dispenser;

[0036] 1.2 Place 2000 mesh copper mesh on CsPbBr 3 Perovskite quantum dot sample surface;

[0037] 1.3 Place the above sample in a plasma device, use nitrogen as the plasma source, excite nitrogen to ionize the gas, and let the plasma irradiate the sample through the through-hole area in the copper mesh to realize the release of oleic acid and oleylamine ligands in the through-hole area. Carbon-carbon double bond polymerization;

[0038] 1.4 Removal of unpolymerized CsPbBr by water etching 3 Perovskite quantum dot part (the part corresponding to the mask area) to obtain CsPbB...

Embodiment 2

[0041] This example uses CsPbBr 3 Taking perovskite quantum dots as an example, the surface ligands are oleic acid and oleylamine, and there are carbon-carbon double bonds in the middle of the hydrocarbon chains of oleic acid and oleylamine. While patterning it:

[0042] 2.1 The prepared CsPbBr 3 Perovskite quantum dots are scratch-coated on a flexible PET (Polyethylene Terephthalate) substrate;

[0043] 2.2 Place the 1000 mesh ceramic sieve on the CsPbBr 3 Perovskite quantum dot sample surface;

[0044] 2.3 Place the above samples in a plasma equipment, use argon gas as the plasma source at 60 °C, excite argon gas to ionize the gas, and let the plasma irradiate the samples through the through-hole area in the ceramic sieve plate to achieve oil in the through-hole area. Carbon-carbon double bond polymerization of acid and oleylamine ligands;

[0045] 2.4 Washing with ethanol to remove unpolymerized CsPbBr 3 Part of perovskite quantum dots, resulting in CsPbBr 3 Perovski...

Embodiment 3

[0048] In this example, CsPbX 3 (X=Cl, Br, I) Perovskite quantum dots are taken as an example. The surface ligands are oleic acid and oleylamine, which contain carbon-carbon double bonds in the middle of the hydrocarbon chains of oleic acid and oleylamine.

[0049] on CsPbCl 1.5 Br 1.5 In the process of patterning perovskite quantum dots:

[0050] 3.1 The prepared CsPbCl 1.5 Br 1.5 The perovskite quantum dots are coated on the surface of the glass substrate by spin-coating with a homogenizer;

[0051] 3.2 Place the ceramic frit in CsPbCl 1.5 Br 1.5 Perovskite quantum dot sample surface;

[0052] 3.3 Place the above sample in the plasma equipment, use argon as the plasma source, excite the argon to ionize the gas, let the plasma irradiate the sample through the through-hole area of ​​the ceramic sieve plate, and realize the combination of oleic acid and oleylamine in the through-hole area. The carbon-carbon double bond polymerization of the body;

[0053] 3.4 Erosion w...

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Abstract

The invention discloses a colloidal quantum dot film patterning method. The colloidal quantum dot film patterning method comprises the steps of: S1, preparing a colloidal quantum dot, wherein the colloidal quantum dot is a perovskite type halogen quantum dot having an organic ligand on the surface, and the organic ligand carbon chain contains an unsaturated bond; S2, applying the colloidal quantumdot on the substrate to form a colloidal quantum dot film; S3, providing a pre-configured mask structure on the surface of the colloidal quantum dot film, wherein the mask structure includes a through hole region and a mask region; S4, putting the structure in the step S3 into a plasma device, and employing the plasma to perform irradiation of the colloidal quantum dot to complete modification ofthe colloidal quantum dot corresponding to the through hole region; and S5, employing the chemical corrosion method to remove the colloidal quantum dot corresponding to the mask region to complete patterning of the colloidal quantum dot film. The colloidal quantum dot film patterning method is simple to operate and low in cost.

Description

technical field [0001] The invention relates to the technical field of materials, in particular to a method for patterning a colloidal quantum dot film. Background technique [0002] Quantum dot materials are important materials in the field of nanoscience and nanotechnology. Due to their excellent photophysical properties, such as the visible light band coordination of emission wavelengths, narrow half-peak width, high color gamut, etc., quantum dot materials are used in light-emitting diodes, High-definition display and other fields have huge application potential, and quantum dot display technology is an ideal next-generation high-definition display technology. Although traditional Cd-based quantum dots have been partially commercialized, their high fabrication cost and complex pixel fabrication process restrict their large-scale promotion. [0003] Perovskite quantum dots are a new type of nanomaterials. Due to their excellent optoelectronic properties, such as high qua...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/12H10K71/233H10K50/115
Inventor 王立朱怡远
Owner NANCHANG UNIV
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