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Process for machining mesa diode

A processing technology and diode technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of poor breakdown voltage effect, achieve high breakdown voltage and improve the effect of breakdown voltage

Inactive Publication Date: 2019-04-05
嘉兴实新企业服务有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of processing technology of mesa diode, to solve the problem that the PN junction geometry of the existing general mesa structure diode has poor effect on improving the breakdown voltage of the device

Method used

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Embodiment Construction

[0018] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0019] The present invention provides a technical solution: a processing technology of a mesa diode, the processing technology includes the following

[0020] step:

[0021] Finished diffuser→lithographic groove→corrosion of circular groove mesa→growth silicon dioxide film on circular groove mesa and cleaning treatment→coating glass powder→baking glass powder→glass passivation→surface corrosion cleaning, circular groove mesa The thickness of the grown silicon dioxide film is 1.5-2 nm.

[0022] S1. Carry out the lithography process...

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Abstract

The invention discloses a process for machining a mesa diode. The process comprises the following steps of producing a diffusion sheet; photoetching a trench; corroding a circular trough mesa; growingsilicon dioxide film on the circular trough mesa and performing a cleaning treatment; coating glass powders; baking glass powders; performing glass passivation; and performing surface corrosion and cleaning. The process is characterized by preparing a mixed acid etching solution by mixing nitric acid, hydrofluoric acid, and glacial acetic acid in a volume ratio of 5:3:1; then etching the photoetched silicon wafer into the mixed acid etching solution to obtain the PN-junction mesa trench of each chip; and etching the mesa diode PN-junction into a circular shape. The circular shape has a smoothcurved surface and can have the highest breakdown voltage so as to improve the breakdown voltage effect of a device.

Description

technical field [0001] The invention relates to the technical field of semiconductor electronic components, in particular to a processing technology of a mesa diode. Background technique [0002] Although the manufacturing method of the mesa diode and the PN junction is the same as that of the diffusion type, only the PN junction and its necessary parts are retained, and the unnecessary parts are etched away with chemicals. The rest of it takes on a mesa shape, hence the name. The mesa type produced in the early stage was made by using the diffusion method on semiconductor materials. Therefore, this mesa type is also called a diffusion mesa type. [0003] The impact of the PN junction geometry and the electric field on the surface of the semiconductor on the breakdown voltage is significant. Due to the adverse effects of the angular electric field and the surface electric field on the breakdown voltage, high voltage diodes generally do not use a planar structure but a mes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329H01L29/06
CPCH01L29/8613H01L29/0611H01L29/0615H01L29/6609
Inventor 吴强德
Owner 嘉兴实新企业服务有限公司
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