Forming method of tin alloy electroplating bath liquid and preparation method of soldering tin salient point plating

A technology of electroplating baths and tin alloys, applied in coatings, electrolytic coatings, etc., can solve problems such as void effects, achieve the effects of ensuring deposition, improving reliability and service life, and inhibiting the formation of intermetallic compounds

Active Publication Date: 2019-04-09
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a method for forming a tin alloy electroplating bath, a method for preparing a solder bump coating and a solder bump coating, so as to solve the problem of the Kirkendall void effect in the prior art

Method used

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  • Forming method of tin alloy electroplating bath liquid and preparation method of soldering tin salient point plating
  • Forming method of tin alloy electroplating bath liquid and preparation method of soldering tin salient point plating

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Step S1: Surface modification (modification) of nano-diamonds (particles) with a particle size of 10nm using mPEG with a molecular weight of 2000, the mixture can be stirred slightly at room temperature for 3 hours, and then use an ultrafiltration centrifuge tube with a molecular weight cut-off (MWCO) of 3000 Centrifuge to remove unmodified mPEG, that is, remove residual or redundant polyethylene glycol polymers to obtain polyethylene glycol polymer modified nano-diamonds (particles), and then add methanesulfonic acid system tin-silver-copper electroplating bath Among them, the tin alloy electroplating bath can be tin-silver-copper electroplating bath, and the specific metal components can be based on product needs;

[0028] Step S2: The tin alloy electroplating bath composition that adopts comprises methanesulfonic acid 120g / L, tin methanesulfonate 20g / L, silver methanesulfonate 0.3g / L, copper methanesulfonate 0.3g / L, The concentration of electroplating additives is 8m...

Embodiment 2

[0034] Step S1: surface-modify single-layer graphene (particles) with a diameter of 0.5 μm to 5 μm and a thickness of 0.8-1.2 nm using mPEG-COOH with a molecular weight of 1000. MWCO) 2000 ultrafiltration centrifuge tube is centrifuged to remove unmodified mPEG-COOH to obtain nano-graphene modified by polyethylene glycol polymer, and then add methanesulfonic acid system tin-silver-copper electroplating bath;

[0035]Step S2: The tin alloy electroplating bath composition that adopts comprises methanesulfonic acid 120g / L, tin methanesulfonate 20g / L, silver methanesulfonate 0.3g / L, copper methanesulfonate 0.3g / L, The concentration of electroplating additives is 8ml / L for the opener, 30ml / L for the silver complexing agent, and 30ml / L for the lightening agent;

[0036] Step S3: Make the concentration of the modified nano-graphene in the formed electroplating bath solution be 0.01wt%;

[0037] Step S4: The prepared composite tin alloy electroplating bath solution is subjected to ul...

Embodiment 3

[0041] Step S1: modify the nano-silver particles with a particle size of 10-20nm to have a diameter of 0.5μm-5μm and a thickness of 5nm-25nm. Materials, the mixture can be stirred slightly at room temperature for 3 hours, and then centrifuged with an ultrafiltration centrifuge tube with a molecular weight cut-off (MWCO) of 3000 to remove unmodified mPEG-COOH to obtain modified nanoparticles modified with polyethylene glycol polymers. The composite material of graphene is then added in the tin-silver-copper electroplating bath of methanesulfonic acid system;

[0042] Step S2: The tin alloy electroplating bath composition that adopts comprises methanesulfonic acid 120g / L, tin methanesulfonate 20g / L, silver methanesulfonate 0.3g / L, copper methanesulfonate 0.3g / L, The concentration of electroplating additives is 8ml / L for the opener, 30ml / L for the silver complexing agent, and 30ml / L for the lightening agent;

[0043] Step S3: Make the concentration of nano-silver modified graphe...

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Abstract

The invention provides a forming method of tin alloy electroplating bath liquid, a preparation method of a soldering tin salient point plating and the soldering tin salient point plating. The formingmethod of the tin alloy electroplating bath liquid includes the steps that a nanomaterial is modified with a polyethylene glycol polymer; and the modified nanomaterial is added into the tin alloy electroplating bath liquid, and the tin alloy electroplating bath liquid is treated through ultrasound. According to the forming method of the tin alloy electroplating bath liquid, the preparation methodof the soldering tin salient point plating and the soldering tin salient point plating, the nano-material is surface-modified through the polymer, the modified nanoparticles are evenly dispersed in the tin alloy electroplating bath liquid, the stability of the nanomaterial in the tin alloy electroplating bath liquid is improved, the ultrasound is used for dispersion treatment, the possibility of clustering of the nanoparticles is reduced, uniform deposition during electroplating of the nanoparticles can be effectively guaranteed, the nanoparticles can be effectively embedded into lattices of the formed soldering tin salient point plating, and the effect of inhibiting forming of intermetallic compounds is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a tin alloy electroplating bath and a method for preparing a solder bump coating. Background technique [0002] With the development of electronic products to be light, thin, short, small and functionally diverse, new requirements are put forward for high-density electronic packaging. Since the bonding of chip flip-chip bumps can reach more than 90% of the packaging density, it has now become a High-performance packaging is commonly used in packaging interconnection, and it is one of the most widely used packaging technologies in 2.5D and 3D integrated packaging. Chip flip-chip bump bonding technology includes solder bump technology (Solder bump) and copper pillar bump technology (Copper pillar bump). However, whether it is tin solder bump technology or copper pillar bump technology, they all have the problem that intermetallic compounds (IMC) are ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/60C25D15/00C25D5/02
CPCC25D3/60C25D5/02C25D15/00
Inventor 武青青胡少坚朱建军
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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