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Metal oxide semiconductor turn-off thyristor and manufacturing method thereof

A technology of oxide semiconductors and production methods, which is applied in semiconductor/solid-state device manufacturing, thyristors, semiconductor devices, etc., can solve the problems of poor process control accuracy, complex production process, and difficulty in mass production, and achieve low difficulty in process manufacturing , high process control precision, easy mass production effect

Inactive Publication Date: 2019-04-09
泉州臻美智能科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Although the existing metal-oxide-semiconductor turn-off thyristor devices have many technical advantages, due to the limitation of the device structure and production process, the mesa process or silicon wafer bonding process is often used. The production process is extremely complicated and the process control accuracy is also low. Poor, difficult to mass-produce, unsatisfactory yield

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  • Metal oxide semiconductor turn-off thyristor and manufacturing method thereof
  • Metal oxide semiconductor turn-off thyristor and manufacturing method thereof
  • Metal oxide semiconductor turn-off thyristor and manufacturing method thereof

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Embodiment Construction

[0046] The invention will be described in more detail below with reference to the accompanying drawings. In the various figures, the same elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0047] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0048] If the purpose is to describe the situation directly on another layer or another a...

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Abstract

The present invention provides a metal oxide semiconductor turn-off thyristor and a manufacturing method thereof, the thyristor comprises: a substrate of a first conductivity type, a first epitaxial layer of a second conductivity type, a second epitaxial layer of the second conductivity type, and a third epitaxial layer of the second conductivity type, a first injection region of the first conductivity type formed on the third epitaxial layer, a second injection region of the first conductivity type formed in the first injection region, and a third injection region of the second conductivity type formed in the first injection region, a fourth injection region of the second conductivity type formed in the third epitaxial layer, a silicon oxide layer formed on upper surface of the third epitaxial layer, an anode, a cathode, a first gate electrode, and a second gate electrode. The thyristor has low manufacturing difficulty, high process control precision, and is suitable for mass production.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a metal oxide semiconductor turn-off thyristor and a manufacturing method thereof. Background technique [0002] The metal oxide semiconductor turn-off thyristor is a power device that integrates MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) and GTO (Gate Turn-off Thyristor, gate turn-off thyristor) at chip level. Through chip-level integration, the parasitic inductance and parasitic capacitance caused by the bonding wires when the single-chip metal-oxide-semiconductor field-effect transistor and the gate turn-off thyristor are packaged together can be completely eliminated. Metal-oxide-semiconductor turn-off thyristors realize their own turn-off by controlling the turn-on of metal-oxide-semiconductor field-effect transistors. Due to the low on-resistance of metal-oxide-semiconductor field-effect transistors, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/74H01L21/332
CPCH01L29/0688H01L29/66363H01L29/74
Inventor 不公告发明人
Owner 泉州臻美智能科技有限公司
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