Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Full-medium metasurface refractive index sensor based on polarization insensitive Fano resonance

A refractive index sensor, polarization-insensitive technology, applied in the direction of phase influence characteristic measurement, etc., can solve the problems of lossy price, inconvenient measurement, expensive, etc., and achieve the effect of meeting measurement needs, high quality factor, and high sensitivity

Inactive Publication Date: 2019-04-12
NANKAI UNIV
View PDF2 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Most of the research work on SPR sensors uses noble metal materials with good conductivity, and its disadvantages are lossy and expensive
Due to the existence of loss, the sensitivity and quality factor of SPR sensors made of metal materials are generally not high
Moreover, most of the existing refractive index sensors are sensitive to the polarization state of the incident light, which brings great inconvenience to the experimental measurement.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Full-medium metasurface refractive index sensor based on polarization insensitive Fano resonance
  • Full-medium metasurface refractive index sensor based on polarization insensitive Fano resonance
  • Full-medium metasurface refractive index sensor based on polarization insensitive Fano resonance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Based on the above-mentioned design principles, embodiments of the present invention provide an all-dielectric metasurface refractive index sensor based on polarization-insensitive Fano resonance, see figure 1 , the refractive index sensor consists of a dielectric substrate 1 and a dielectric metasurface microstructure unit array from bottom to top, the dielectric metasurface microstructure unit array is set on the dielectric substrate 1, and the dielectric metasurface microstructure unit array consists of several dielectric The composition of metasurface microstructure unit 2. Each dielectric metasurface microstructure unit 2 along R 1 and R 2 Periodically arranged in two directions.

[0040] Among them, see figure 2 , each dielectric metasurface microstructure unit 2 is composed of three V-shaped dielectric antennas, the three V-shaped dielectric antennas are mirror-symmetrical about the x=0 plane and have 120-degree rotational symmetry, and the distance between t...

Embodiment 2

[0044]The scheme in Embodiment 1 is further introduced below in conjunction with specific device parameters, see the description below for details:

[0045] Wherein, the above-mentioned dielectric metasurface microstructure unit 2 is made of any one of single crystal silicon, polycrystalline silicon, silicon dioxide or titanium dioxide, and other dielectric materials. In actual implementation, this embodiment of the present invention does not limit it. The needs of the application are selected.

[0046] Furthermore, the thickness t of the dielectric metasurface microstructure unit 2 is preferably 5-200 nanometers, which is not limited in the embodiment of the present invention, and can be selected according to the needs of practical applications.

[0047] Preferably, the dielectric substrate 1 is made of any one of single crystal silicon, silicon dioxide or quartz glass; the materials of the dielectric substrate 1 and the dielectric metasurface microstructure unit 2 are differ...

Embodiment 3

[0054] Combine below image 3 , theoretically verify that the refractive index sensor provided by the embodiment of the present invention is not sensitive to the polarization state of incident light, see the following description for details:

[0055] Such as image 3 As shown, the dielectric metasurface microstructure unit 2 is mirror-symmetrical about the x=0 plane, and the plane wave is normally incident from top to bottom.

[0056] Assuming that the normal incident plane wave electric field is along the y-axis direction, the incident electric field is recorded as:

[0057] E. 0,i =C i y (1)

[0058] Among them, C i is a complex number, representing the complex amplitude value of the electric field along the y-direction component, and y is a unit length vector along the y-axis direction. Because the dielectric metasurface microstructure unit 2 is mirror-symmetric about the x=0 plane, according to the principle of electromagnetic field symmetry, it can be obtained by t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
thicknessaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention discloses a full-medium metasurface refractive index sensor based on polarization insensitive Fano resonance. The full-medium metasurface refractive index sensor is sequentially composedof a medium substrate and a medium metasurface microstructure unit array from bottom to top; the medium metasurface microstructure unit array is composed of a plurality of medium metasurface microstructure units; and each medium metasurface microstructure unit is composed of three V-shaped medium antennas, wherein the three V-shaped medium antennas are in mirror symmetry with respect to a plane (x=0) and have 120-degree rotational symmetry. The full-medium metasurface refractive index sensor is insensitive to the polarization state of any normal accident light, can generate Fano resonance, and has high-quality factors and high sensitivity, and the measurement needs in practical application are met.

Description

technical field [0001] The invention relates to the field of micro-nano optical sensors, in particular to an all-dielectric metasurface refractive index sensor based on polarization-insensitive Fano resonance. Background technique [0002] Micro-nano optical sensor is not only one of the important development directions of the optoelectronics industry, but also a frontier research direction in the field of optics. Micro-nano optical sensors have the advantages of high sensitivity, small size, easy integration, and low loss. They can monitor and analyze different chemical and biological species in real time, and are used in different fields such as diagnostics, pharmacy, food safety, environmental monitoring, and homeland security. It has played a powerful role and has a wide application prospect, which has attracted the attention of researchers. [0003] The research of traditional micro-nano optical sensors mainly focuses on sensors based on Surface Plasmon Resonance (SPR)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/41
CPCG01N21/41
Inventor 刘会刚郑露刘海涛刘波
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com