Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of band pass filter and preparation method thereof

A band-pass filter and channel technology, applied in waveguide devices, circuits, electrical components, etc., to improve the quality factor, eliminate the eddy current effect, and reduce the structure volume

Inactive Publication Date: 2020-07-31
西安电子科技大学昆山创新研究院
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, since the semiconductor silicon substrate has a large loss under high frequency conditions, improving the high loss phenomenon of the semiconductor silicon substrate structure under high frequency conditions has become an urgent problem to be solved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of band pass filter and preparation method thereof
  • A kind of band pass filter and preparation method thereof
  • A kind of band pass filter and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Such as figure 1 and figure 2 as shown, figure 1 It is a schematic diagram of a bandpass filter proposed by the present invention, figure 2 For the side view of the band-pass filter proposed by the present invention, this embodiment provides a band-pass filter, including:

[0067] The ground layer 5, the top layer 1, and the upper dielectric cavity 2, the first window layer 3, the middle dielectric cavity 9, the second window layer 10 and the lower dielectric cavity 4 are sequentially arranged between the ground layer 5 and the top layer 1 from top to bottom, The upper dielectric cavity 2, the middle dielectric cavity 9 and the lower dielectric cavity 4 are made of air, which has a low dielectric constant, and the signal is transmitted in the air with almost no loss. The upper dielectric cavity 2, the middle dielectric cavity 9 and the The lower medium cavity 4 is designed with SIW structure, wherein,

[0068] The upper dielectric cavity 2 is provided with a plura...

Embodiment 2

[0094] Such as Figure 5(a) ~ Figure 5(l) as shown, Figure 5(a) ~ Figure 5(l) It is a schematic flow chart of a method for preparing a band-pass filter proposed by the present invention. This embodiment provides a method for preparing a band-pass filter, including the following steps:

[0095] S01: Deposit an upper isolation layer 7 on the first surface of the silicon substrate 6, and form a top layer 1 on the upper isolation layer 7. The function of the production isolation layer is to prevent the top layer 1 from directly contacting the silicon substrate 6. The generated top layer 1 includes Input port 11 and output port 12, as shown in Figure 5 (a);

[0096] It should be noted that, after step S01 is completed, for the convenience of manufacturing, the top layer 1 is first bonded to the wafer 100, and the wafer 100 is used as a carrier and serves as the base part of the structure during the entire preparation process to prevent the top layer 1 from directly contacting the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a band-pass filter. The band-pass filter comprises a grounding layer and a top layer, and an upper dielectric cavity, a first window layer, a middle dielectric cavity, a second window layer and a lower dielectric cavity which are sequentially arranged between the grounding layer and the top layer from top to bottom, wherein the upper dielectric cavity and the lower mediumdielectric are made of air. According to the band-pass filter provided by the invention, a silicon substrate around conductor columns in a traditional SIW structure is removed, and instead, air is directly used as a dielectric cavity filling material, so that an eddy current effect of the silicon substrate in a high-frequency circuit is eliminated, the corresponding high-frequency loss of the silicon substrate does not exist, the power consumption generated when resonance waves are transmitted in a resonant cavity is completely eliminated, and the quality factor of the band-pass filter provided by the invention is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor communication, in particular to a band-pass filter and a preparation method thereof. Background technique [0002] Driven by commercial applications, millimeter-wave wireless communication has developed rapidly. In order to make the millimeter-wave wireless communication system have high performance, miniaturized volume, high integration and low production cost, people have developed System on Chip (System on Chip) successively. a Chip, referred to as SOC) and system package (Small Out-Line Package, referred to as SOP) two integration technologies, but as the operating frequency of the system rises to millimeter wave, the traditional integration technology faces great challenges, thicker The substrate and larger volume also greatly limit the further development of traditional technologies. [0003] In recent years, Professor Wu Ke proposed the basic concept of Substrate Integrated Waveguide...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/208H01P11/00
CPCH01P1/2088H01P11/007
Inventor 刘晓贤朱樟明刘阳卢启军尹湘坤杨银堂
Owner 西安电子科技大学昆山创新研究院