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Preparation method of ZnO/Zinc-indium-sulfur nanoheterojunction

A zinc-indium-sulfur nano-heterojunction technology, which is applied in chemical instruments and methods, hydrogen production, hydrogen/synthesis gas production, etc., can solve the problems of low repeatability, complex preparation process of nano-film catalysts, effective separation of catalysts and Recycling problems and other problems, to achieve high repeatability, increase the absorption rate of visible light, and improve the effect of photocurrent density

Active Publication Date: 2019-04-16
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Most ZnIn 2 S 4 The research on the preparation of nanosheets is concentrated in powder form, which brings many difficulties to the effective separation and recycling of catalysts.
While the existing ZnIn 2 S 4 The preparation process of nano-film catalysts is complicated, with low repeatability, and dangerous substances such as aqua regia are used (Nanoscale 3(6), 2602-2608, 2011)

Method used

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Examples

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Effect test

Embodiment 1

[0024] A preparation method of ZnO / zinc indium sulfur nano-heterojunction, the molecular formula of zinc indium sulfur is ZnIn 2 S 4 , combining atomic layer deposition and hydrothermal methods to achieve ZnIn on fluorine-doped tin oxide (FTO) substrates 2 S 4 In situ growth of nanosheet array structure, followed by atomic layer deposition (ALD) technology to deposit a certain thickness of ZnO thin film to construct ZnO / ZnIn with high-efficiency visible light catalytic activity 2 S 4 A nano-heterojunction structure comprising the following steps:

[0025] (1) On the surface of the cleaned FTO conductive glass, a 100 nm ZnS seed layer was deposited by ALD technology at a deposition temperature of 150 °C;

[0026] (2) Mix zinc nitrate, indium chloride, and thioacetamide into the inner tank of the reactor according to the molar ratio of 1:3:4, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to form A homogeneous solution with an indium salt concen...

Embodiment 2

[0030] A ZnO / ZnIn 2 S 4 The preparation method and application of the nano-heterojunction, comprising the following steps:

[0031] (1) On the surface of the cleaned FTO conductive glass, a 50 nm ZnS seed layer was deposited by ALD technology at a deposition temperature of 200 °C;

[0032] (2) Mix zinc sulfate, indium nitrate, and thioacetamide into the inner tank of the reactor according to the molar ratio of 1:2:4, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to make indium A homogeneous solution with a salt concentration of 0.3M; the reaction temperature was maintained at 180°C, and the reaction time was 6h.

[0033] (3) Take out the sample after the reaction in (2), wash and dry it, and then deposit a 100nm ZnO nano film on its surface by ALD technology to obtain ZnO / ZnIn 2 S 4 nanoheterojunction.

Embodiment 3

[0035] A ZnO / ZnIn 2 S 4 The preparation method and application of the nano-heterojunction, comprising the following steps:

[0036] (1) On the surface of the cleaned FTO conductive glass, a 200 nm ZnS seed layer was deposited by ALD technology at a deposition temperature of 250 °C;

[0037] (2) Mix zinc chloride, indium acetate, and thiourea into the inner tank of the reactor according to the molar ratio of 1:4:4, then add 40ml of ethylene glycol, and then stir or ultrasonically dissolve to make the indium salt concentration It is a 0.4M homogeneous solution; the reaction temperature is maintained at 220°C, and the reaction time is 2h.

[0038] (3) Take out the sample after the reaction in (2), wash and dry it, and then deposit a 150nm ZnO nano film on its surface by ALD technology to obtain ZnO / ZnIn 2 S 4 nanoheterojunction.

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Abstract

The invention provides a preparation method of a ZnO / zinc-indium-sulfur nanoheterojunction. An atomic layer deposition and hydrothermal method is taken into consideration, the in-situ growth of a ZnIn2S4 nanosheet array structure on a fluorine-doped tin oxide (FTO) substrate is achieved, a certain thickness of ZnO thin film is deposited by the ALD technology, and a ZnO / ZnIn2S4 nano-heterojunctionstucture is constructed, and the heterojunction of the ZnIn2S4 nanosheet array thin film with efficient visible-light photocatalytic activity is obtained. The visible-light absorptivity is improved, photon-generated carriers can be effectively separated at an interface, and the photocurrent density is greatly improved. The whole preparation process is simple, controllable, green, high in repeatability and suitable for large-scale preparation, and has great application prospects in the engineering fields such as photocatalysis.

Description

technical field [0001] The invention belongs to the field of nano film preparation and solar energy application conversion, and in particular relates to a preparation method of ZnO / zinc indium sulfur nano heterojunction. Background technique [0002] Facing increasingly severe environmental problems, seeking new clean energy has become an important topic in scientific research and industry. Hydrogen production based on photocatalytic water splitting can convert solar energy into chemical energy for storage. Due to its high thermal energy, it has the value of large-scale commercial application and has become an important option for green and clean energy. [0003] The focus of large-scale application of solar energy conversion based on photocatalysis is to find efficient catalysts, for which many researchers have made many attempts. In the past few years, many oxide semiconductors (such as TiO 2 ) have received extensive attention due to their good chemical stability and ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04C01B3/04
CPCC01B3/042B01J27/04C01B2203/1088C01B2203/1076C01B2203/0277B01J35/39Y02E60/36
Inventor 何丹农卢静涂兴龙白仕亨李砚瑞金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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