Processing course dynamic optimization method and system used in chemical machinery grinding of metal embolization

Abstract

The invention provides a processing course dynamic optimization method and system used in chemically machinery grinding of metal embolization. Metal embolization is formed in a target material layer.The processing course dynamic optimization method comprises the following steps of (1) setting a target removing thickness and grinding parameters in a closed loop control system; (2) executing a first chemical machinery grinding step through utilizing the grinding parameters, so as to reduce the thickness of the target material layer so as to achieve of a first actual removing thickness; (3) measuring the removed first actual removing thickness of the target material layer in the step of first chemical machinery grinding; (4) according to the difference between the target removing thickness and the first actual removing thickness, transforming the thickness difference into corresponding grinding parameter difference values to dynamically update the grinding parameters; and (5), executingthe step of second chemical machinery grinding according to updated grinding parameters, to reduce the removing after the thickness of the target material layer achieves a second actual removing thickness, so as to dynamically optimizing the grinding parameters. Through the adoption of the processing course dynamic optimization method disclosed by the invention, in the grinding course, the removing thickness of the target material layer can be accurately controlled.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a process dynamic optimization method and system in chemical mechanical polishing of metal plugs. Background technique [0002] In the existing semiconductor process, the chemical mechanical polishing process (CMP) is a very important process. Taking metal tungsten chemical mechanical polishing process (WCMP) as an example, in the preparation process of tungsten connection through hole (CT), generally a deep well type deep groove is formed in the oxide layer, and then the deep well type deep groove is filled with metal Tungsten, during the filling process, metal tungsten will also be deposited on the surface of the oxide layer; at this time, it is necessary to remove the metal tungsten on the surface of the oxide layer through metal tungsten chemical mechanical grinding process, and only keep the deep well type deep groove The metal tungsten is us...

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a process dynamic optimization method and system in the chemical mechanical polishing of metal plugs, which is used to solve the problem of inability to precisely control the grinding process in the chemical mechanical polishing process in the prior art. Conditions, it is easy to make the surface of the target material layer have metal residues, so that there is a short circuit between the wires or too many target material layers that are easy to remove, resulting in the problem of parasitic capacitance, and the chemical mechanical polishing process in the prior art cannot be based on the grinding consumables The problem of poor grinding effect caused by timely compensation of grinding time and grinding pressure for the decline of the removal ability of the target material layer

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