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A kind of bismuth sulfide/titanium dioxide composite film and its preparation method and application

A composite film and titanium dioxide technology, which is applied in the field of bismuth sulfide/titanium dioxide composite film and its preparation, can solve the problems of poor film repeatability and low visible light absorption performance, and achieve high repeatability, improved photoelectric performance, and good stability. Effect

Active Publication Date: 2021-08-24
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the preparation of TiO in the prior art 2 thin films with poor reproducibility and TiO 2 Insufficiencies and shortcomings such as low absorption performance of thin films to visible light, the primary purpose of the present invention is to provide a method for preparing bismuth sulfide / titanium dioxide composite thin films, which improves the photoelectric performance of the film by changing the annealing temperature

Method used

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  • A kind of bismuth sulfide/titanium dioxide composite film and its preparation method and application
  • A kind of bismuth sulfide/titanium dioxide composite film and its preparation method and application
  • A kind of bismuth sulfide/titanium dioxide composite film and its preparation method and application

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Embodiment 1

[0052] (1) Scrub the FTO glass substrate with detergent, then ultrasonically clean it with acetone, alcohol, and deionized water for 15 minutes, then dry it with a nitrogen gun, and then treat the FTO substrate with ozone for 15 minutes;

[0053] (2) Mix deionized water and concentrated hydrochloric acid according to the volume ratio of 1:1, put them on a magnetic stirrer and magnetically stir for 20 minutes to obtain a hydrochloric acid solution; then use a pipette to absorb tetrabutyl titanate, and add titanium to the hydrochloric acid solution tetrabutyl titanate, and continued to stir for 10 minutes to obtain a reaction solution; wherein, the amount of tetrabutyl titanate was 1.5% of the volume of the hydrochloric acid solution;

[0054] (3) Put the conductive glass dried in step (1) into the inner lining of the reactor with the conductive side facing down, the angle between the glass and the inner substrate is 45°, add the reaction solution prepared in step (1), and react ...

Embodiment 2

[0060] The difference between this embodiment and embodiment 1 is that the annealing temperature in step (7) is 300° C. and the time is 40 min, and the rest of the steps are the same as in embodiment 1.

Embodiment 3

[0062] The difference between this embodiment and embodiment 1 is that in step (7), the annealing temperature is 350° C. and the time is 40 min, and the rest of the steps are the same as in embodiment 1.

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Abstract

The invention relates to the technical field of semiconductor material preparation, in particular to a bismuth sulfide / titanium dioxide composite film, a preparation method and application thereof. In the present invention, tetrabutyl titanate is used as titanium source, hydrochloric acid and water are used as solvents, and TiO is prepared by hydrothermal method. 2 Nanorod thin film; mix bismuth nitrate solution and sodium thiosulfate solution with a pH of 1 to 2, stir and react for 10 to 20 minutes to obtain a precursor solution; TiO 2 The nanorod film is placed in the precursor solution, subjected to hydrothermal sensitization treatment, and finally annealed at 100-400° C. for 30-50 minutes to obtain a bismuth sulfide / titanium dioxide composite material film. The crystallinity and photoelectric properties of the bismuth sulfide / titanium dioxide composite film prepared by the present invention are obviously improved, and the Bi 2 S 3 Uniform crystallinity, simple operation, low cost, high repeatability and good stability.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a bismuth sulfide / titanium dioxide composite film, a preparation method and application thereof. Background technique [0002] With the increasingly serious energy crisis, clean energy represented by solar energy has received widespread attention. Semiconductor titanium dioxide (TiO 2 ) have excellent photoelectrochemical properties, and are widely used in solar cells, photocatalytic degradation of pollutants, and photolysis of water. As an environmentally friendly and efficient semiconductor material, titanium dioxide material has good applications in the above fields, and is considered to be the most promising photovoltaic material. [0003] Currently TiO 2 The preparation methods mainly include physical deposition method, sol-gel method, hydrothermal method, precipitation method, hydrolysis method, plasma enhanced CVD method and so on. Among them...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
Inventor 李新利韩雪洋竹笛陈永超李丽华马战红黄金亮任凤章
Owner HENAN UNIV OF SCI & TECH
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