Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bismuth sulfide/titanium dioxide composite material film, and preparation method and application thereof

A technology of composite thin film and titanium dioxide, which is applied in the field of bismuth sulfide/titanium dioxide composite thin film and its preparation, can solve the problems of low visible light absorption performance and poor film repeatability, and achieve improved photoelectric performance, high repeatability, and uniform crystallization control sexual effect

Active Publication Date: 2019-05-03
HENAN UNIV OF SCI & TECH
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the preparation of TiO in the prior art 2 thin films with poor reproducibility and TiO 2 Insufficiencies and shortcomings such as low absorption performance of thin films to visible light, the primary purpose of the present invention is to provide a method for preparing bismuth sulfide / titanium dioxide composite thin films, which improves the photoelectric performance of the film by changing the annealing temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bismuth sulfide/titanium dioxide composite material film, and preparation method and application thereof
  • Bismuth sulfide/titanium dioxide composite material film, and preparation method and application thereof
  • Bismuth sulfide/titanium dioxide composite material film, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] (1) After scrubbing the FTO glass substrate with detergent, then ultrasonically cleaned with acetone, alcohol and deionized water for 15min in turn, then dried with a nitrogen gun, and then the FTO substrate was subjected to ozone treatment for 15min;

[0053] (2) deionized water and concentrated hydrochloric acid are mixed according to volume ratio of 1:1, and placed on a magnetic stirrer for magnetic stirring for 20min to obtain a hydrochloric acid solution; then a pipette is used to absorb tetrabutyl titanate, and titanium is added to the hydrochloric acid solution tetrabutyl titanate, and continue stirring for 10min to obtain a reaction solution; wherein, the consumption of tetrabutyl titanate is 1.5% of the volume of the hydrochloric acid solution;

[0054] (3) Put the conductive glass dried in step (1) into the inner lining of the reactor with the conductive surface facing down, the angle between the glass and the inner substrate is 45°, add the reaction solution o...

Embodiment 2

[0060] The difference between this embodiment and Embodiment 1 is that in step (7), the annealing temperature is 300° C. and the time is 40 min, and the remaining steps are the same as those in Embodiment 1.

Embodiment 3

[0062] The difference between this embodiment and Embodiment 1 is that in step (7), the annealing temperature is 350° C. and the time is 40 min, and the remaining steps are the same as those in Embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductor material preparation, and particularly relates to a bismuth sulfide / titanium dioxide composite material film, and a preparation method andapplication thereof. The preparation method comprises the following steps: taking tetrabutyl titanate as a titanium source and taking hydrochloric acid and water as solvents to prepare a TiO2 nanorodthin film by a hydrothermal method; mixing a bismuth nitrate solution with a pH value of 1-2 with a sodium thiosulfate solution, carrying out stirring for a reaction for 10-20 minutes to obtain a precursor solution; and placing the TiO2 nanorod thin film in the precursor solution, carrying out hydrothermal sensitization treatment, and finally carrying out annealing treatment at a temperature of 100-400 DEG C for 30-50 minutes to obtain the bismuth sulfide / titanium dioxide composite material film. The crystallinity and the photoelectric property of the prepared bismuth sulfide / titanium dioxidecomposite film are obviously improved, uniform crystallinity of Bi2S3 is effectively controlled at the same time, operation is simple, cost is low, repeatability is high, and stability is good.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a bismuth sulfide / titanium dioxide composite film, a preparation method and application thereof. Background technique [0002] With the increasingly serious energy crisis, clean energy represented by solar energy has received widespread attention. Semiconductor titanium dioxide (TiO 2 ) have excellent photoelectrochemical properties, and are widely used in solar cells, photocatalytic degradation of pollutants, and photolysis of water. As an environmentally friendly and efficient semiconductor material, titanium dioxide material has good applications in the above fields, and is considered to be the most promising photovoltaic material. [0003] Currently TiO 2 The preparation methods mainly include physical deposition method, sol-gel method, hydrothermal method, precipitation method, hydrolysis method, plasma enhanced CVD method and so on. Among them...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
Inventor 李新利韩雪洋竹笛陈永超李丽华马战红黄金亮任凤章
Owner HENAN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com