Flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer and preparation method thereof

A metal halide, light-emitting device technology, applied in the field of flexible red photoelectric injection light-emitting devices and their preparation, can solve problems such as poor bending stability, achieve good band gap matching, solve the problem of bending stability, and excellent bending resistance. Effect

Inactive Publication Date: 2019-05-07
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to propose a flexible red optoelectronic device based on metal halide perovskite light-emitting layer, aiming at the problem of poor bending stability of flexible d

Method used

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  • Flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer and preparation method thereof
  • Flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer and preparation method thereof
  • Flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0027] Example 1

[0028] SnO 2 Preparation of sol-gel: weigh 2.79g SnCl 2 ·2H 2 O in 25mL of absolute ethanol, reflux for 3 hours at 78°C, aging at 30°C for 3 hours, and then place it at room temperature for 2 days to obtain a pale yellow sol, which is SnO 2 Sol.

[0029] The method of mixed perovskite precursor fluid: A two-step method was used to prepare a mixed perovskite precursor. A: First, 507.7mg PbI 2 , 80.7mg PbBr 2 , 172mg HC(NH 2 ) 2 I (FAI) and 22mg CH 3 NH 3 Br (MABr), DMF (N, N dimethylformamide) and DMSO (dimethyl sulfoxide) (4:1, volume ratio) are mixed and dissolved in 1 mL of solvent. B: Dissolve 194.9mg CsI in 500uL DMSO. Both solutions were stirred at 60°C for 1 hour, and then precursor B was added to precursor A in a volume ratio of 1:19. The mixed precursor was stirred at 60°C for 1 h.

[0030] Spiro-OMeTAD solution preparation method: weigh the hole transport material Spiro-OMeTAD (CuPc-DMP) 80mg, 20uL Li-TFSI (520mg / 1mL acetonitrile), 30uLTBP, 20uL Co salt...

Example Embodiment

[0031] Example 2:

[0032] This embodiment discloses a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer. The preparation steps are as follows:

[0033] The substrate adopts flexible and bendable PEN / ITO with a layer of ITO on the surface. Using SnO prepared in Example 1 2 Sol-gel, mixed perovskite precursor and Spiro-OMeTAD solution.

[0034] (1) Before preparing the electron transport layer, first use tape to remove 2.5×2.5cm 2 The flexible and bendable PEN / ITO substrate with a layer of ITO on the surface is selectively masked, etched with zinc powder and 2M dilute hydrochloric acid, and then wiped off the remaining zinc powder with cotton. Use detergent, ultrapure water, acetone, and ethanol for ultrasonic cleaning for 30 minutes. After the washed glass is blown dry, treat it with UV-ozone cleaning equipment for 60 minutes, and store it in a dust-free environment for later use.

[0035] (2) Preparation of amorphous ...

Example Embodiment

[0040] Example 3:

[0041] This embodiment discloses a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer. The preparation steps are as follows:

[0042] The substrate adopts flexible and bendable PEN / ITO with a layer of ITO on the surface. Using SnO prepared in Example 1 2 Sol-gel, mixed perovskite precursor and Spiro-OMeTAD solution.

[0043] (1) Before preparing the electron transport layer, first use tape to remove 2.5×2.5cm 2 The flexible and bendable PEN / ITO substrate with a layer of ITO on the surface is selectively masked, etched with zinc powder and 2M dilute hydrochloric acid, and then wiped off the remaining zinc powder with cotton. Use detergent, ultrapure water, acetone, and ethanol for ultrasonic cleaning for 30 minutes. After the washed glass is blown dry, treat it with UV-ozone cleaning equipment for 60 minutes, and store it in a dust-free environment for later use.

[0044] (2) Preparation of amorphous ...

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Abstract

The invention provides a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer and a preparation method thereof. The flexible red photoelectric injection light-emitting device comprises an anode layer, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a flexible substrate which are arranged in order; the anode layer employs Au, the hole transport layer employs Spiro-OMeTAD, the perovskite light-emitting layer employs Cs0.05FA0.8075MA0.1425Pb(I0.85Br0.15)3 mixed perovskite film material, the electron transport layer employs an amorphous non-continuous electron transport material SnO2, and the flexible substrate employs ITO/PEN. The preparation method of the flexible red photoelectric injection light-emitting device based on the metal halide perovskite light-emitting layer is simple and practicable and low in cost, and the prepared flexible red photoelectric injection light-emitting device effectively solves the bending stability problem of a flexible perovskite device.

Description

technical field [0001] The invention relates to semiconductor material light-emitting technology, in particular to a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer and a preparation method thereof. Background technique [0002] Organometallic halide perovskites possess amazing optoelectronic properties and have attracted extensive attention in recent years for applications in solar cells and light-emitting diodes. Its unique properties include high-efficiency charge extraction capability, continuously adjustable optical bandgap, carrier diffusion length of 100-1000nm, exciton lifetime of 100ns, and low processing temperature and other excellent material properties. For perovskite solar cells (PSCs), certified conversion efficiencies (PCEs) have rapidly increased to over 23% in less than five years, a performance comparable to modern state-of-the-art single crystals that have been in development for more than...

Claims

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Application Information

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IPC IPC(8): H01L51/54H01L51/00H01L51/50H01L51/56
Inventor 边继明王敏焕刘洪珠冯昱霖董庆顺史彦涛
Owner DALIAN UNIV OF TECH
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