Method for preparing high-performance silicon-carbon negative electrode composite material of lithium ion battery
A technology of lithium-ion batteries and composite materials, which is applied in the field of preparation of silicon-carbon negative electrode composite materials, can solve the problems of not meeting the needs of industrialization, complicated preparation process, uncontrollable, etc. the effect of
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Embodiment 1
[0037] First, a high-quality nano-silicon is prepared by thermal plasma method. 2kg of silicon powder with a particle size of 25μm is gradually fed into the powder feeder, and then the working gas argon is passed into the plasma reaction equipment as a carrier. The flow rate of the gas is 0.5m 3 h -1 , the flow rate of argon as side gas is 5.0m 3 h -1 , the flow rate of the central gas argon is 68m 3 h -1 . Turn on the powder feeder, output the silicon powder at a speed of 2g / min, and transport it to the high temperature zone sent to the reaction center through the carrier gas (argon gas), waiting for the silicon powder to be vaporized or decomposed into gas. Then its gaseous state is sent to the low temperature zone through the central gas (argon gas), at 10m 3 / h Rapid cooling, gaseous atoms nucleate and grow at a suitable temperature to form high-quality nano-silicon spheres, which are collected for use.
[0038] Select 1kg of high-quality sucrose material and put it...
Embodiment 2
[0041] First, a high-quality nano-silicon is prepared by thermal plasma method. 2kg of silicon powder with a particle size of 25μm is gradually fed into the powder feeder, and then the working gas argon is passed into the plasma reaction equipment as a carrier. The flow rate of the gas is 0.5m 3 h -1 , the flow rate of argon as side gas is 5.0m 3 h -1 , the flow rate of the central gas argon is 68m 3 h -1 . Turn on the powder feeder, output the silicon powder at a speed of 2g / min, and transport it to the high temperature zone sent to the reaction center through the carrier gas (argon gas), waiting for the silicon powder to be vaporized or decomposed into gas. Then its gaseous state is sent to the low temperature zone through the central gas (argon gas), at 10m 3 / h Rapid cooling, gaseous atoms nucleate and grow at a suitable temperature to form high-quality nano-silicon spheres, which are collected for use.
[0042] Select 1kg of high-quality sucrose material and put it...
Embodiment 3
[0045] First, a high-quality nano-silicon is prepared by thermal plasma method. 2kg of silicon powder with a particle size of 25μm is gradually fed into the powder feeder, and then the working gas argon is passed into the plasma reaction equipment as a carrier. The flow rate of the gas is 0.5m 3 h -1 , the flow rate of argon as side gas is 5.0m 3 h -1 , the flow rate of the central gas argon is 68m 3 h -1 . Turn on the powder feeder, output the silicon powder at a speed of 2g / min, and transport it to the high temperature zone sent to the reaction center through the carrier gas (argon gas), waiting for the silicon powder to be vaporized or decomposed into gas. Then its gaseous state is sent to the low temperature zone through the central gas (argon gas), at 10m 3 / h Rapid cooling, gaseous atoms nucleate and grow at a suitable temperature to form high-quality nano-silicon spheres, which are collected for use.
[0046] Select 1kg of high-quality sucrose material and put it...
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